LDTD123YLT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTD123YLT1G S-LDTD123YLT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT–23 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit V Supply voltage VCC 50 Input voltage VIN −5 to +12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C 3 COLLECTOR R1 R2 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD123YLT1G S-LDTD123YLT1G F62 2.2 10 3000/Tape & Reel LDTD123YLT3G S-LDTD123YLT3G F62 2.2 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. VI(off) − − 0.3 VI(on) 2 − − VO(on) − 0.1 0.3 V II − − 3.6 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V GI 56 − − − VO=5V, IO=50mA Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 3.6 4.5 5.5 − − fT − 200 − MHz Input voltage Output voltage Input current Output current DC current gain Transition frequency Symbol Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=50mA/2.5mA VCE=10V, IE= −50mA, f=100MHz ∗ ∗Transition frequency of the device Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTD123YLT1G ;S-LDTD123YLT1G zElectrical characteristic curves 100 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 20 10 5 2 Ta= −40 C 25 C 100 C 1 500m 2m 1m 500µ Ta=100 C 25 C −40 C 200µ 100µ 50µ 20µ 10µ 5µ 200m 100m 500 µ 1m VCC=5V 5m 50 2µ 2m 5m 10m 20m 1µ 0 50m100m 200m 500m 0.5 1k 200 1 VO=5V 2.5 3.0 lO/lI=20 500m Ta=100 C 25 C −40 C 100 50 20 10 5 2 1 500 µ 1m 2.0 Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 500 1.5 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1.0 200m Ta=100 C 25 C −40 C 100m 50m 20m 10m 5m 2m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTD123YLT1G ;S-LDTD123YLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3