LESD3Z5.0CMT1G

LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection LESD3Z5.0CMT1G S-LESD3Z5.0CMT1G General Description The LESD3Z5.0CMT1G is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and 1 fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. 2 Applications • • • • Cellular phones Portable devices Digital cameras Power supplies • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOD– 323 Features • • • Small Body Outline Dimensions Low Body Height Peak Power up to 200 Watts @ 8 x 20 _s Pulse • • • Low Leakage current Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model • • IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection ORDERING INFORMATION Device LESD3Z5.0CMT1G S-LESD3Z5.0CMT1G Marking 3M Shipping 3000/Tape & Reel Absolute Ratings (Tamb=25°C ) Symbol Parameter Value Units PPP Peak Pulse Power (tp = 8/20μs) 200 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -55 to +155 °C Top Operating Temperature Range -40 to +125 °C Tj Maximum junction temperature 150 °C ±15 ±8 KV IEC61000-4-2 (ESD) air discharge contact discharge IEC61000-4-4 (EFT) ESD Voltage Per Human Body Model 40 A 16 KV Rev. O 1/4 LESHAN RADIO COMPANY, LTD. LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA Device LESD3Z5.0CMT1G VRWM (V) IR(uA) VBR (V)@ IT IT VC (V) VC (V) IPP PPK C @ VRWM (Note 1) @ IPP=5 A* @ Max IPP* (A)* (W)* (pF) Max Max Min mA Typ Max Max Max Typ 5.0 1 5.6 1.0 11.6 18.6 9.4 174 25 *Surge current waveform per Figure 1. 1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃． Fig1. Pulse Waveform Rev. O 2/4 LESHAN RADIO COMPANY, LTD. LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G Fig2.Power Derating Application Note Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal lines to ground. As the transient rises above the operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to ground. The LESD3Z5.0CMT1G is the ideal boar d evel protection of ESD sensitive semiconductor components. The tiny SOD-323 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. Rev. O 3/4 LESHAN RADIO COMPANY, LTD. LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G SOD-323 K A 1 E B 2 C D 0.63 0.02'' 0.83 1.60 0.063" 2.85 0.112'' H J 0.033'' mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS A B C D E H J K INCHES MILLIMETERS DIM MIN MAX 1.60 1.80 0.063 MIN 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.15 REF MAX 0.016 0.006 REF 0.00 0.10 0.000 0.089 0.177 0.0035 2.30 2.70 0.091 0.004 0.0070 0.106 PIN: 1. CATHODE 2. ANODE Rev. O 4/4