LESD8L5.0CT5G

LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G Transient Voltage Suppressors LESD8L5.0CT5G S-LESD8L5.0CT5G ESD Protection Diodes with Ultra−Low Capacitance 1 The ESD8L is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 2 SOD882 Specification Features: • Ultra Low Capacitance 0.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • • 1 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.020″ (0.5 mm) Stand−off Voltage: 5 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection This is a Pb−Free Device S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 Ordering information QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements Device Marking Shipping LESD8L5.0CT1G N 5000/Tape&Reel LESD8L5.0CT3G N 8000/Tape&Reel LESD8L5.0CT5G N 10000/Tape&Reel MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±8 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 150 mW Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +125 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. Rev.C 1/4 LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G,S-LESD8L5.0CT5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR I Working Peak Reverse Voltage IT VC VBR VRWM IR Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C IPP IR VRWM VBR VC IT V IPP Bi−Directional TVS Capacitance @ VR = 0 and f = 1.0 MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A (Note 3) VC Per IEC61000−4−2 (Note 4) Device Device Marking Max Max Min mA Max Max LESD8L5.0CT5G N 5.0 1.0 5.4 1.0 0.9 12.9 Figures 1 and 2 See Below 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 4. 4. For test procedure see Figures 3. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 Rev. C 2/4 LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G,S-LESD8L5.0CT5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 4. 8 X 20 ms Pulse Waveform Rev. C 3/4 LESHAN RADIO COMPANY, LTD. LESD8L5.0CT5G,S-LESD8L5.0CT5G SOD882 DIMENSION OUTLINE: Unit:mm Rev. C 4/4