LM1MA141WAT1G

LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. • Fast trr, < 10 ns • Low CD, < 15 pF We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device LM1MA141WAT1G LM1MA141KWA3G LM1MA142WAT1G LM1MA142WAT3G Package SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 Shipping LM1MA141WAT1G LM1MA142WAT1G SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT 3 1 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 2 CASE 419–04, STYLE 4 SOT–323 /SC – 70 ANODE 3 DEVICE MARKING LM1MA141WAT1G = MN LM1MA142WAT1G=MO MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage LM1MA141WAT1G VR LM1MA142WAT1G Peak Reverse Voltage LM1MA141WAT1G VRM Forward Current Peak Forward Current Peak Forward Surge Current LM1MA142WAT1G Single Dual Single Dual Single Dual IF IFM IFSM(1) 1 2 CATHODE Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc Marking Symbol Vdc mAdc mAdc mAdc Type No. 141WA142WA Symbol MN MO MNX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 –55 ~ +150 Unit mW °C °C Condition VR = 35 V VR = 75 V VF LM1MA141WAT1G V R LM1MA142WAT1G Time CD trr(2) IF = 100 mA IR = 100 µA VR=0, f=1.0 MHz IF=10mA,VR=6.0V RL=100Ω,Irr=0.1 IR Min — — — 40 80 — — Max 0.1 0.1 1.2 — — 15 10 Vdc Vdc pF ns Unit µAdc ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Reverse Voltage Leakage Current LM1MA141WAT1G IR LM1MA142WAT1G Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery 1. t = 1 SEC 2. trr Test Circuit 1/3 LESHAN RADIO COMPANY, LTD. LM1MA141WAT1G LM1MA142WAT1G RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 µs tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 Ω IF OUTPUT PULSE trr t 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA) 10 TA = 150°C TA = 125°C 1.0 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance 1/3 LESHAN RADIO COMPANY, LTD. LM1MA141WAT1G LM1MA142WAT1G SC-70/SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S S 1 2 B D G C 0.05 (0.002) N K J INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 H 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 1/3