LMBD2836LT1G

LMBD2836LT1G S-LMBD2836LT1G Monolithic Dual Switching Diodes 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SOT23(TO-236) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LMBD2836LT1G A2X 3000/Tape&Reel LMBD2836LT3G A2X 10000/Tape&Reel CATHODE 1 ANODE 3 2 CATHODE 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current Average Rectified Current Symbol Limits Unit VRM VR IFM IO 75 75 300 100 V V mA mA Symbol Limits Unit PD 225 mW 1.8 mW/℃ RθJA 556 ℃/W PD 300 mW 2.4 mW/℃ RθJA 417 TJ , Tstg -55~+150 ℃/W ℃ 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR– 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.A Apr. 2018 1/4 LMBD2836LT1G, S-LMBD2836LT1G Monolithic Dual Switching Diodes 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) CHARACTERISTICS Reverse Breakdown Voltage Symbol VBR (IBR = 100 µA) Reverse Voltage Leakage Current IR (VR=50V) Diode capacitance CT (VR = 0, f = 1.0 MHz) Min Max 75 - - 100 - 4 - 1 - 1 - 1.2 - 4 Unit V nA pF Forward voltage (IF =10mA) VF (IF =50mA) (IF =100mA) Reverse Recovery Time Trr (IF = IR = 10 mA, IR(REC) = 1.0mA) (Figure 1) +10 V V nS 2.0 k 820 Ω 100 µH 0.1 µF 50 Ω OUTPUT PULSE GENERATOR tr 0.1µF IF tp t IF t rr 10% t 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE i INPUT SIGNAL V R IR R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit Leshan Radio Company, LTD. Rev.A Apr. 2018 2/4 LMBD2836LT1G, S-LMBD2836LT1G Monolithic Dual Switching Diodes 6.ELECTRICAL CHARACTERISTICS CURVES 1.00E-04 1 150℃ 1.00E-05 150℃ 85℃ 25℃ 0.01 -55℃ IR,Reverse Current(A) IF,Forward Current(A) 0.1 85℃ 1.00E-06 1.00E-07 25℃ 1.00E-08 0.001 -55℃ 1.00E-09 0.0001 1.00E-10 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 0 20 40 60 80 VR,Reverse Voltage(V) 100 IR vs. VR IF vs. VF 0.8 f=1MHz Ta=25℃ 0.75 CT,Capacitor(pF) 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0 10 20 30 40 VR,Reverse Voltage(V) 50 CT vs. VR Leshan Radio Company, LTD. Rev.A Apr. 2018 3/4 LMBD2836LT1G, S-LMBD2836LT1G Monolithic Dual Switching Diodes 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Apr. 2018 4/4