LMBD6050LT1G

LMBD6050LT1G S-LMBD6050LT1G Switching Diode 1. FEATURES ● We declare that the material of product compliance with SOT23 RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 3 CATHODE 1 ANODE 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBD6050LT1G 5A 3000/Tape&Reel LMBD6050LT3G 5A 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage Parameter VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR– 5 Board (Note 1) TA = 25°C Symbol Value PD 225 mW 1.8 mW/℃ RθJA 556 ℃/W PD 300 mW 2.4 mW/℃ RθJA 417 ℃/W TJ , Tstg -55~+150 ℃ Derate above 25°C Thermal Resistance, Junction to Ambient Unit Total Device Dissipation Alumina Substrate(Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.A Mar. 2018 1/4 LMBD6050LT1G,S-LMBD6050LT1G Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Reverse Breakdown Voltage V(BR) (I(BR) = 100 µA) Reverse Voltage Leakage Current IR (VR = 50 V) Min. Typ. Max. Unit 70 - - - - 0.1 µA 0.55 - 0.7 V 0.85 - 1.1 - - 4 - - 2.5 V Forward Voltage VF (IF = 1.0 mA) (IF = 100 mA) Reverse Recovery Time (IF=IR =10mA,IR(REC) =1.0mA)(Figure 1) Capacitance(VR =0V) +10 V trr C nS pF 2.0 k 820 Ω 100 µH 0.1 µF 50 Ω OUTPUT PULSE GENERATOR tr 0.1µF IF tp t IF t rr 10% t 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE i INPUT SIGNAL V R IR R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit Leshan Radio Company, LTD. Rev.A Mar. 2018 2/4 LMBD6050LT1G,S-LMBD6050LT1G Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1.00E-04 0.1 150℃ 1.00E-05 IF(A) IR,Reverse Current(A) 85℃ 0.01 150℃ 25℃ -55℃ 0.001 1.00E-06 85℃ 1.00E-07 25℃ 1.00E-08 -55℃ 1.00E-09 0.0001 1.00E-10 0.2 0.4 0.6 VF(V) 0.8 1 1.2 0 20 40 60 VR,Reverse Voltage(V) IR vs. VR IF vs. VF 0.7 f=1MHz Ta=25℃ 0.65 CT(pF) 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 10 20 30 40 50 VR(V) CT vs. VR Leshan Radio Company, LTD. Rev.A Mar. 2018 3/4 LMBD6050LT1G,S-LMBD6050LT1G Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Mar. 2018 4/4