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LMBD6100LT1G

LMBD6100LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    单片双开关二极管

  • 数据手册
  • 价格&库存
LMBD6100LT1G 数据手册
LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LMBD6100LT1G S-LMBD6100LT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS(EACH DIODE) 1 Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc Symbol PD Max 225 Unit mW 1.8 mW/°C R θ JA PD 556 300 °C/W mW R θ JA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C 2 SOT– 23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature ANODE 1 3 CATHODE 2 ANODE ORDERING INFORMATION DEVICE LMBD6100LT1G S-LMBD6100LT1G MARKING 5BM LMBD6100LT3G S-LMBD6100LT3G 5BM SHIPPING 3000/Tape & Reel 10000/Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Characteristic Symbol Min Max Unit V (BR) 70 — Vdc IR — 0.1 µ Adc 0.55 0.80 0.7 1.1 t rr — 4.0 ns C — 2.5 pF OFFCHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 50 Vdc) Forward Voltage (I F = 1.0 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Vdc VF Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMBD6100LT1G,S-LMBD6100LT1G 820 W +10 V 2.0 k IF 100 mH tr 0.1 mF tp IF t trr 10% t 0.1 mF 90% DUT 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 10 I R , REVERSE CURRENT (m A) TA = 85°C TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 20 30 40 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.O 2/3 50 LESHAN RADIO COMPANY, LTD. LMBD6100LT1G,S-LMBD6100LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3
LMBD6100LT1G 价格&库存

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LMBD6100LT1G
  •  国内价格
  • 20+0.12100
  • 100+0.10450
  • 300+0.08800
  • 800+0.06600
  • 3000+0.05500

库存:91117

LMBD6100LT1G
    •  国内价格
    • 1+0.07000
    • 30+0.06750
    • 100+0.06500
    • 500+0.06000
    • 1000+0.05750
    • 2000+0.05600

    库存:0