LMBD7000LT3G

LMBD7000LT1G S-LMBD7000LT1G Dual Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBD7000LT1G M5C 3000/Tape&Reel LMBD7000LT3G M5C 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Reverse Voltage VR 100 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC Total Device Dissipation, Thermal Resistance, Symbol PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.C Jun. 2019 1/4 LMBD7000LT1G, S-LMBD7000LT1G Dual Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (I(BR)=100μA) Symbol VBR Min. Typ. Max. 100 - V Forward Voltage (IF = 1.0 mA) 0.55 - (IF = 10 mA) 0.67 - (IF = 100 mA) 0.75 - VF 0.7 0.82 1.1 μA Reverse Voltage Leakage Current (VR = 50V) - - 1.0 (VR = 100V) - - 3 (VR = 50V,TJ = 125°C) - - 100 Diode Capacitance (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mA) Leshan Radio Company, LTD. Unit V IR CD trr Rev.C Jun. 2019 pF - - 1.5 ns - - 4.0 2/4 LMBD7000LT1G, S-LMBD7000LT1G Dual Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1000 1000 150℃ 100 100 IR,Reverse Current(uA) IF, Forward Current(mA) 150℃ 85℃ 25℃ 10 -55℃ 1 85℃ 10 1 25℃ 0.1 -55℃ 0.01 0.1 0.001 0 0.2 0.4 0.6 0.8 VF, Forward Voltage(V) 1 1.2 0 Forward Characteristics 20 40 60 80 VR, Reverse Voltage(V) 100 Reverse Characteristics 0.6 f=1MHz C,Capacitor(pF) 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 VR, Reverse Voltage(V) 50 Capacitor Characteristics Leshan Radio Company, LTD. Rev.C Jun. 2019 3/4 LMBD7000LT1G, S-LMBD7000LT1G Dual Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Jun. 2019 4/4