LMBR1100ET1G

LMBR120ET1G thru LMBR1200ET1G Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratory * * * * 2 Flammability Classification 94V-0 Low power loss,high efficiency For use in low voltage high frequency inverters, free wheeling,and polarity protection applications Guardring for over voltage protection High temperature soldering guaranteed: 260°C/10 seconds at terminals 2 1 1 Mechanical Data SOD323HE Case: SOD-323HE molded plastic over sky die Terminals: Tin Plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0053 g Handling precautin:None We declare that the material of product is Haloggen free (green epoxy compound) 1.Electrical Characteristic Maximum & Thermal Characteristics Ratings Parameter Symbol symbol device marking code at 25°C ambient temperature unless otherwise specified. LMBR LMBR LMBR LMBR 120ET1G 130ET1G 140ET1G 150ET1G LMBR 160ET1G LMBR LMBR LMBR LMBR 180ET1G 1100ET1G 1150ET1G 1200ET1G 12 13 14 15 16 18 110 115 120 Unit Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at Tc = 75°C IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 22 A Typical thermal resistance (Note 1) RθJA RθJL 210 70 °C/W Operating junction temperature range storage temperature range –55 to +125 TJ –55 to +150 °C –55 to +150 TSTG °C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol Maximum instantaneous forward voltage at(IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, T J = 25°C) VF Maximum DC reverse current at rated DC blocking voltage TA = 25°C T J = 125°C IR Typical junction capacitance at 4.0V, 1MHz NOTES: LMBR LMBR LMBR LMBR 120ET1G 130ET1G 140ET1G 150ET1G 0.48 0.55 0.25 10 LMBR 160ET1G Unit V 0.68 0.85 0.03 10 0.13 10 160 CJ LMBR LMBR LMBR LMBR 180ET1G 1100ET1G 1150ET1G 1200ET1G 0.9 0.92 mA PF 1. 8.0mm2 (.013mm thick) land areas Leshan Radio Company, LTD. Rev.D Nov. 2017 1/5 LMBR120ET1G thru LMBR1200ET1G 2.Ratings and Characteristic Curves ( TA = 25°C unless otherwise noted ) Fig. 2 – Maximum Non-repetitive Peak Forward Surge Current LMBR160~200 0.5 LMBR120~150 0 Peak forward surge current (A) 1.0 100 Instantaneous Forward Current (A) 60 Hz Resistive or Inductive Load 11 25 50 75 100 125 150 Case Temperature, °C Fig 3. – Typical Instantaneous Forward Characteristics TJ = 25°C Pulse width = 300µs 1% Duty Cycle LMBR120~140 1.0 LMBR180~1100 0.1 0.01 0.2 0 1 LMBR1150~1200 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) 10 Tj=125℃ 1.0 Tj=75℃ 0.1 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig 6. – Typical Junction Capacitance 1000 1000 Junction Capacitance (pF) Transient thermal impedance(°C/W) Tj=25℃ 0.001 Fig 5. –typical transient thermal impedance 100 10 1 0.01 10 Number of Cycles at 60Hz Fig 4. – Typical Reverse Characteristics LMBR150~160 10 TJ = TJ max 8.3ms Single Half Sine-wave (JEDEC Method) 22 0 Instantaneous Reverse Current (mA) Average Forward Rectified Current Fig. 1 – Forward Current Derating Curve 0.1 1.0 t,Pulse duration,sec Leshan Radio Company, LTD. 10 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 100 10 0.1 Rev.D Nov. 2017 1 10 Reverse Voltage (V) 100 2/5 LMBR120ET1G thru LMBR1200ET1G 3.OUTLINE AND DIMENSIONS SOD323HE MIN MAX Typ. DIM A 2.30 2.70 2.55 B 1.20 1.35 1.25 C 1.75 1.95 1.90 D - - 0.30 E 0.55 0.75 0.67 F 0.10 0.20 0.15 G 0.45 0.65 0.50 I 0.40 0.70 0.50 J 1.15 1.55 1.40 K - - 0.80 All Dimensions in mm 4.SOLDERING FOOTPRINT RECOMMENDED PAD COMPATIBLE PAD SOD323HE DIM (mm) A 1.1 B 2.0 C 1.9 D 0.8 E 1.0 Leshan Radio Company, LTD. SOD323HE Rev.D Nov. 2017 DIM (mm) D 1.0 E 0.8 C 2.4 3/5 LMBR120ET1G thru LMBR1200ET1G 5.Suggested thermal profile for soldering process 1. Storage environment：Temperature=5~40℃ Humidity=55±25% 2. Reflow soldering of surface-mount device Pt Critical Zone TL to TP TP Ramp-up Temperature TL Ts max TL Ts min ts preheat Ramp-down 25 time t25℃ to Peak 3. Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to TP)