LMBT2222ADW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT2222ADW1T1G S-LMBT2222ADW1T1G 6 5 4 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg –55 to +150 °C Collector Current – Continuous 3 SC-88 (3) (2) (1) THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Q1 (4) Q2 (5) (6) ORDERING INFORMATION Device LMBT2222ADW1T1G S-LMBT2222ADW1T1G LMBT2222ADW1T3G S-LMBT2222ADW1T3G Marking Shipping XX 3000/Tape & Reel XX 10000/Tape & Reel Rev.O 1/7 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 – Vdc Collector–Base Breakdown Voltage (IC = 10
Adc, IE = 0) V(BR)CBO 75 – Vdc Emitter–Base Breakdown Voltage (IE = 10
Adc, IC = 0) V(BR)EBO 6.0 – Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX – 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO – – 0.01 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO – 100 nAdc IBL – 20 nAdc 35 50 75 35 100 50 40 – – – – 300 – – – – 0.3 1.0 0.6 – 1.2 2.0 OFF CHARACTERISTICS Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Adc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) hFE Collector–Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base–Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) – Vdc Vdc 2. Pulse Test: Pulse Width ≤ 300
s, Duty Cycle ≤ 2.0%. Rev.O 2/7 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 25 pF 2.0 0.25 8.0 1.25 – – 8.0 4.0 50 75 300 375 5.0 25 35 200 – 150 – 4.0 Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc Noise Figure (IC = 100
Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) kΩ X 10–4 –
mhos ps NF dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td – 10 tr – 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts – 225 tf – 60 ns ns 3. fT is defined as the frequency at which |hfe| extrapolates to unity. Rev.O 3/7 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 2. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 300 t, TIME (ns) t, TIME (ns) 100 70 50 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Turn–On Time 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 Figure 4. Turn–Off Time Rev.O 4/7 500 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G 10 10 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW 8.0 NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 0.5 1.0 2.0 5.0 10 20 4.0 5.0 k 10 k 20 k 50 k 100 k Figure 6. Source Resistance Effects 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 5. Frequency Effects 10 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 7. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Current–Gain Bandwidth Product 1.3 1 1.2 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 500 1.0 k 2.0 k RS, SOURCE RESISTANCE (OHMS) Ceb 0.2 0.3 100 200 f, FREQUENCY (kHz) 20 2.0 0.1 0 50 50 100 30 CAPACITANCE (pF) 6.0 2.0 0 0.01 0.02 0.05 0.1 0.2 150°C 0.1 0.01 IC = 50 mA 100 mA 500 mA 1.0 mA −55°C 25°C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 9. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 10 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Rev.O 5/7 LESHAN RADIO COMPANY, LTD. 1.2 1.1 +0.5 VCE = 1 V 0 0.9 COEFFICIENT (mV/ °C) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 0.3 0.001 0.01 0.1 -2.5 1 0.1 0.2 0.5 IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Voltage vs. Collector Current 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients 10 10 ms 100 ms 1 Thermal Limit IC (A) VBE(on), BASE−EMITTER VOLTAGE (V) LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G 1 ms 1s 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 100 VCE (Vdc) Figure 13. Safe Operating Area Rev.O 6/7 500 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G SOT–363/SC–88 A G V 6 5 4 1 2 3 S DIM A B C D G H J K N S V –B– D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 N J C H K Rev.O 7/7