LMBT2222ALT1G

LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT2222ALT1G 1P 3000/Tape&Reel LMBT2222ALT3G 1P 10000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6 Vdc IC 600 mAdc Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 LMBT2222ALT1G, S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage VBR(CEO) (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage VBR(CBO) (IC = 10 μAdc, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) (IE = 10 μAdc, IC = 0) Collector Cutoff Current ICEX (VCE = 60 Vdc, VEB(off) = 3.0Vdc) Min. Typ. Max. 40 - V 75 - V 6 - nA - - 10 μA ICBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) - - 0.01 (VCB = 60 Vdc, IE = 0, TA = 125°C) - - 10 Emitter Cutoff Current IEBO (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current IBL (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Unit V nA - - 100 nA - - 20 (IC = 0.1 mAdc, VCE = 10 Vdc) 35 - - (IC = 1.0 mAdc, VCE = 10 Vdc) 50 - - (IC = 10 mAdc, VCE = 10 Vdc) 75 - - (IC = 10 mAdc, VCE = 10 Vdc,TA= –55°C) 35 - - (IC = 150 mAdc, VCE = 10 Vdc) 100 - 300 (IC = 150 mAdc, VCE = 1.0 Vdc) 50 - - (IC = 500 mAdc, VCE = 10 Vdc) 40 - - ON CHARACTERISTICS (Note 2.) HFE DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) V (IC = 150 mAdc, IB = 15 mAdc) - - 0.3 (IC = 500 mAdc, IB = 50 mAdc) - - 1 Base–Emitter Saturation Voltage VBE(sat) V (IC = 150 mAdc, IB = 15 mAdc) 0.6 - 1.2 (IC = 500 mAdc, IB = 50 mAdc) - - 2 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (IC = 20mAdc, VCE= 20Vdc, f = 100MHz) Output Capacitance Cobo (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MHz 300 - - - - 8 pF pF - - 25 td - - 10 tr - - 25 ts - - 225 tf - - 60 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc,VEB=-0.5Vdc, IC = 150mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/5 LMBT2222ALT1G, S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 1.0 1000 VCE=10V, 25°C VCE=1V, 125°C HFE, DC Current Gain VCE, Collector-Emitter Voltage (V) VCE=10V, 125°C 100 VCE=1V,-55°C VCE=1V, 25°C VCE=10V,-55°C 0.8 0.6 IC=500mA 0.4 IC=10mA 0.2 IC=150mA IC=1mA 10 0.0001 0.001 0.01 0.1 IC, Collector Current (A) 0.0 1.0E-06 1 1.0E+00 Collector Saturation Region DC Current Gain 1.6 10 IC/IB=10 VBE(sat), Base-Emitter Saturation Voltage (V) VCE(sat), Collector-Emitter Saturation Voltage (V) 1.0E-04 1.0E-02 IB, Base Current (A) 1 150°C 25°C 0.1 0.01 0.001 -55°C 0.01 0.1 1 IC/IB=10 1.4 1.2 1.0 -55°C 0.8 150°C 0.6 25°C 0.4 0.2 0.001 IC, Collector Current (A) 0.01 0.1 IC, Collector Current (A) Collector Emitter Saturation Voltage vs. Collector Current Base Emitter Saturation Voltage vs. Collector Current Leshan Radio Company, LTD. Rev.B Mar 2016 1 3/5 LMBT2222ALT1G, S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 35 1.8 VCE=1V 30 1.4 C,Capacotor(pF) VBE(on), Base-Emitter Voltage (V) 1.6 1.2 1.0 -55°C 25 Cibo 20 15 0.8 10 0.6 25°C 0.4 5 150°C 0.2 0.001 Cobo 0 0.01 0.1 IC, Collector Current (A) 1 0.1 1 10 VR,Reverse Voltage(V) Capacitance Base Emitter Voltage vs. Collector Current 0.08 1.0E+03 0.07 IB=350μA IC,Collector Current (A) 0.06 fT(MHz) 1.0E+02 1.0E+01 1.0E+00 1.0E-04 IB=300μA 0.05 IB=250μA 0.04 IB=200μA 0.03 IB=150μA 0.02 IB=100μA 0.01 IB=50μA 0.00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 IC, Collector Current (A) Current−Gain Bandwidth Product Leshan Radio Company, LTD. 0 1 2 3 4 5 6 7 VCE,Collector Emitter Voltage (V) 8 Collector Current vs.Collector Emitter Voltage Rev.B Mar 2016 4/5 LMBT2222ALT1G, S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 5/5