LMBT2222AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT2222AWT1G S-LMBT2222AWT1G 3 1 2 MAXIMUM RATINGS Rating CASE 419–02, STYLE 3 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 75 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 600 mAdc Collector Current — Continuous IC SOT–323 /SC – 70 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW RθJA TJ , Tstg 833 –55 to +150 °C/W °C Total Device Dissipation FR– 5 Board, TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 2 EMITTER DEVICE MARKING LMBT2222AWT1G S-LMBT2222AWT1G = P1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — Vdc V (BR)CBO 75 — Vdc V 6.0 — Vdc I BL — 20 nAdc I CEX — 10 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (I C = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE (BR)EBO EB 1. Pulse Test: Pulse Width