LMBT3904DW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3904DW1T1G = MA Featrues We declare that the material of product compliance with RoHS requirements. LMBT3904DW1T1G 6 5 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 60 6.0 200 HBM>16000, MM>2000 Unit Vdc Vdc Vdc mAdc V ORDERING INFORMATION Device LMBT3904DW1T1G LMBT3904DW1T3G Marking Shipping 3000 Units/Reel 10000 Units/Reel MA MA THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 –55 to +150 Unit mW °C/W °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 1/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBL – ICEX – 50 50 nAdc – nAdc – Vdc – Vdc Vdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 40 70 100 60 30 VCE(sat) – – VBE(sat) 0.65 – 0.85 0.95 0.2 0.3 Vdc – – 300 – – Vdc – SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%. fT 300 Cobo – Cibo – 8.0 4.0 pF – pF MHz 2/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) Symbol hie 1.0 2.0 hre 0.5 0.1 hfe 100 100 hoe 1.0 3.0 NF – – 5.0 4.0 40 60 dB 400 400 mmhos 8.0 10 – 10 12 X 10–4 Min Max Unit kΩ SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) td tr ts tf – – – – 35 35 200 50 ns ns DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms t1 +3 V +10.9 V 275 10 k 1N916 Cs < 4 pF* DUTY CYCLE = 2% 0 -0.5 V < 1 ns Cs < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit 3/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 3.0 2.0 Cobo 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 200 7 5 1.0 2.0 3.0 Figure 4. Charge Data IC/IB = 10 VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V 40 V 15 V 2.0 V 50 70 100 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time 500 300 200 t s, STORAGE TIME (ns) ′ 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 Figure 6. Rise Time t′s = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 IC/IB = 20 IC/IB = 20 IC/IB = 10 IC/IB = 10 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 4/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 12 10 8 6 4 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f = 1.0 kHz IC = 1.0 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.2 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 5/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C +25°C -55°C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25°C 1.0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C) 0.5 0 -0.5 -1.0 -1.5 qVB FOR VBE(sat) 0 20 40 60 80 100 120 140 160 180 200 -55°C TO +25°C +25°C TO +125°C qVC FOR VCE(sat) -55°C TO +25°C +25°C TO +125°C VBE @ VCE =1.0 V 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 VCE(sat) @ IC/IB =10 -2.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 6/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G SC-88/SOT-363 NOTES: A G 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 S 1 5 4 - B- 2 3 D6PL 0.2 (0.008) M B M N J A B C D G H J K N S C H K PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.5 mm (min) 0.4 mm (min) 1.9 mm 0.65 mm 0.65 mm 7/10