LMBT3904LT1G

LMBT3904LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 NPN 40V 200mA SOT-23

  • 详情介绍
  • 数据手册
  • 价格&库存
LMBT3904LT1G 数据手册
LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a LMBT3904LT1G S-LMBT3904LT1G Pb−Free Lead Finish • • We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device Marking LMBT3904LT1G S-LMBT3904LT1G 1AM LMBT3904LT3G S-LMBT3904LT3G 1AM 1 Shipping 2 3000/Tape & Reel SOT–23 10000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous IC 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — Vdc V (BR)CBO 60 — Vdc V (BR)EBO 6.0 — Vdc Base Cutoff Current I BL — 50 nAdc ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current I CEX — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc) Collector–Base Breakdown Voltage (I C = 10 µAdc) Emitter–Base Breakdown Voltage (I E = 10 µAdc) ( V CE = 30Vdc, V EB = 3.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width
LMBT3904LT1G
1. 物料型号:LMBT3904LT1G是一个NPN型晶体管,常用于开关和放大应用。

2. 器件简介:LMBT3904LT1G是一种小信号NPN晶体管,具有低噪声和高增益特性,适用于音频放大器和开关电路。

3. 引脚分配:通常NPN晶体管有三个引脚,分别是发射极(E)、基极(B)和集电极(C)。

4. 参数特性:包括但不限于最大电流(Ic)、最大电压(Vce)、功耗(Pd)、增益(hFE)等。

5. 功能详解:LMBT3904LT1G可以在音频频率范围内提供高增益放大,同时保持低噪声水平。

6. 应用信息:适用于音频放大器、无线通信设备、传感器等需要低噪声放大的场合。

7. 封装信息:LMBT3904LT1G通常采用SOT-23或SOT-89等小型封装。
LMBT3904LT1G 价格&库存

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LMBT3904LT1G
  •  国内价格
  • 20+0.03150
  • 200+0.02940
  • 600+0.02730
  • 3000+0.02520

库存:23

LMBT3904LT1G
  •  国内价格
  • 20+0.02960
  • 200+0.02760
  • 600+0.02560
  • 3000+0.02360

库存:280645