LMBT3904TT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT3904TT1G S-LMBT3904TT1G ORDERING INFORMATION Device LMBT3904TT1G S-LMBT3904TT1G LMBT3904TT3G S-LMBT3904TT3G Marking MA MA MA MA Shipping 3000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous IC SC-89 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW RθJA PD 1.6 600 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 400 –55 to +150 mW/°C °C/W °C 2 EMITTER DEVICE MARKING LMBT3904TT1G = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(3) V (BR)CEO 40 — Vdc (I C = 1.0 mAdc) Collector–Base Breakdown Voltage V (BR)CBO 60 — Vdc V (BR)EBO 6.0 — Vdc I BL — 50 nAdc I CEX — 50 nAdc OFF CHARACTERISTICS (I C = 10 µAdc) Emitter–Base Breakdown Voltage (I E = 10 µAdc) Base Cutoff Current ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current ( V CE = 30Vdc, V EB = 3.0Vdc ) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test: Pulse Width