LMBT3904WT1G

LMBT3904WT1G S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 COLLECTOR LMBT3904WT1G AM 3000/Tape&Reel LMBT3904WT3G AM 10000/Tape&Reel 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6 Vdc IC 200 mAdc Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 150 mW Derate above 25ºC 1.2 mW/ºC 833 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 LMBT3904WT1G, S-LMBT3904WT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Collector–Emitter Breakdown Voltage VBR(CEO) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage VBR(CBO) (IC = 10 μAdc, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) (IE = 10 μAdc, IC = 0) Collector Cutoff Current ICEX ( VCE = 30 Vdc, VEB = 3.0Vdc) Base Cutoff Current IBL Min. Typ. Max. 40 - V 60 - V 6 - nA - - 50 nA - - 50 40 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 100 - 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 - - 30 - - (IC = 10 mAdc, IB = 1.0 mAdc) - - 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) - - 0.3 (VCE = 30 Vdc, VEB = 3.0Vdc) Unit V ON CHARACTERISTICS (Note 2.) HFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage V VBE(sat) V (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 - 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) - - 0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (IC = 10mAdc, VCE= 20Vdc, f = 100MHz) Output Capacitance Cobo (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MHz 300 - pF - - 4 pF - - 8 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc,VBE=-0.5Vdc, IC = 10mAdc, IB1 = 1.0 mAdc) td - - 35 tr - - 35 (VCC = 3.0 Vdc, IC = 10 mAdc,IB1 = IB2 = 1.0 mAdc) ts - - 200 tf - - 50 ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/5 LMBT3904WT1G, S-LMBT3904WT1G General Purpose Transistors NPN Silicon 6.ELRCTRICAL CHARACTERISTICS CURVES 400 10 150℃ Cibo HFE, DC Current Gain C,Capacitance(pF) 300 Cobo 25℃ 200 -55℃ 100 1 0.01 0 0.1 1 10 VR.Verse Voltage(V) 0.1 100 1.0 10.0 IC,Collector Current (mA) DC Current Gain Capacitance 2.5 1.4 VBE(sat),Base Emitter Saturation Voltage(V) IC/IB=10 VCE(sat), Collector-emitter Saturation(V) 100.0 2.0 150℃ 1.5 1.0 25℃ 0.5 -55℃ 0.0 0.001 0.01 0.1 IC, Collector Current(A) 1 IC/IB=10 1.2 1 -55℃ 0.8 25℃ 0.6 150℃ 0.4 0.2 0 0.0001 1 VBE(sat) vs. IC VCE(sat) vs. IC Leshan Radio Company, LTD. 0.001 0.01 0.1 IC, Collector Current(A) Rev.B Mar 2016 3/5 LMBT3904WT1G, S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1 1.4 1.2 VCE, Collecter Emitter Voltage(V) VBE(on), Base-emitter Voltage(V) VCE=1V 1 0.8 -55℃ 25℃ 0.6 0.4 150℃ 0.8 IC=30mA 0.6 IC=10mA IC=100mA 0.4 0.2 0.2 IC=1mA 0 0.0001 0.001 0.01 0.1 IC, Colletor Current(A) 1 0 0.001 10 Collector Saturation Region VBE(on) vs. IC Leshan Radio Company, LTD. 0.01 0.1 1 IB, Base Current(mA) Rev.B Mar 2016 4/5 LMBT3904WT1G, S-LMBT3904WT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF MIN NOM MAX 0.028REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 5/5