LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor
Transistor
LMBT3906DW1T1G
6
The LMBT3906DW1T1 device isa spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
•
•
•
•
•
•
•
4
1
2
3
SOT-363
(3)
hFE, 100–300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking: LMBT3906DW1T1G = A2
5
(2)
(1)
Q1
Q2
(4)
(5)
(6)
Features
z We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS
ORDERING INFORMATION
Symbol
Value
Unit
VCEO
–40
Vdc
Collector–Base Voltage
VCBO
–40
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
IC
–200
mAdc
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
TJ, Tstg
–55 to +150
°C
Rating
Collector–Emitter Voltage
Collector Current – Continuous
Marking
Shipping
LMBT3906DW1T1G
Device
A2
3000 Units/Reel
LMBT3906DW1T1G
A2
10000 Units/Reel
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Junction and Storage
Temperature Range
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(2)
(I C = –1.0 mAdc, I B = 0)
V(BR)CEO
–40
–
Vdc
Collector–Base Breakdown Voltage
V(BR)CBO
–40
–
Vdc
V(BR)EBO
–5.0
–
Vdc
IBL
–
–50
nAdc
ICEX
–
–50
nAdc
60
80
100
60
30
–
–
300
–
–
–
–
–0.25
–0.4
–0.65
–
–0.85
–0.95
fT
250
–
MHz
Output Capacitance
Cobo
–
4.5
pF
Input Capacitance
Cibo
–
10
pF
Characteristic
OFF CHARACTERISTICS
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
–
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
Input Impedance
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hie
2.0
12
kΩ
Voltage Feedback Ratio
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hre
0.1
10
X 10–4
Small–Signal Current Gain
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hfe
100
400
–
Output Admittance
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hoe
3.0
60
mhos
Noise Figure
(VCE = –5.0 Vdc, IC = –100 Adc, RS = 1.0 k Ω, f = 1.0 kHz)
NF
–
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
td
–
35
Rise Time
(IC = –10 mAdc, IB1 = –1.0 mAdc)
tr
–
35
Storage Time
(VCC = –3.0 Vdc, IC = –10 mAdc)
ts
–
225
Fall Time
(IB1 = IB2 = –1.0 mAdc)
tf
–
75
ns
ns
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤2.0%.
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G
3V
275
< 1 ns
275
10 k
+0.5 V
10.6 V
3V
< 1 ns
+9.1 V
10 k
0
Cs < 4 pF*
300 ns
DUTY CYCLE = 2%
Cs < 4 pF*
1N916
10 < t1 < 500 s
DUTY CYCLE = 2%
10.9 V
t1
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
1000
700
500
300
200
100
70
50
20 30 40
VCC = 40 V
IC/IB = 10
QT
1.0
2.0 3.0
Figure 3. Capacitance
40 V
2.0 V
td @ VOB = 0 V
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
t f , FALL TIME (ns)
TIME (ns)
15 V
30
20
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
1.0
200
500
IC/IB = 10
300
200
10
7
5
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
500
100
70
50
QA
IC/IB = 20
100
70
50
30
20
IC/IB = 10
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Fall Time
Rev.O 3/6
200
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 A
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
8
6
4
IC = 50 A
2
IC = 100 A
0
100
IC = 0.5 mA
0.1
0.2
40
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
100
Figure 8.
h PARAMETERS
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
h ie , INPUT IMPEDANCE (k OHMS)
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
5.0 7.0 10
Figure 10. Output Admittance
5.0 7.0 10
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
Figure 9. Current Gain
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G
TYPICAL STATIC CHARACTERISTICS
1000
VCE = 1 V
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
100
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
V , TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 14. Collector Saturation Region
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
100
200
1.0
0.5
VC FOR VCE(sat)
0
+25°C TO +125°C
-55°C TO +25°C
-0.5
+25°C TO +125°C
-1.0
-55°C TO +25°C
VB FOR VBE(sat)
-1.5
-2.0
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Figure 16. Temperature Coefficients
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
G
DIM
6
5
4
- B-
S
1
2
3
0.2 (0.008) M B M
D6PL
N
J
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
C
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
K
H
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
Rev.O 6/6