LMBT3906LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LMBT3906LT1G S-LMBT3906LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Device Marking LMBT3906LT1G S-LMBT3906LT1G LMBT3906LT3G S-LMBT3906LT3G 2A 2A 2A 2A Shipping 3000/Tape & Reel 1 10000/Tape & Reel 2 MAXIMUM RATINGS SOT– 23 (TO–236AB) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol Value Unit V CEO V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 200 mAdc 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) Symbol Max Unit PD 225 mW T A =25 °C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature PD 300 mW 2.4 R θJA T J , T stg 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING LMBT3906LT1G = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 50 — – 50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) Collector Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Vdc V (BR)CBO Vdc V (BR)EBO Vdc I BL nAdc I CEX nAdc 3. Pulse Width