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LMBT3906N3T5G

LMBT3906N3T5G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT883

  • 描述:

    通用三极管 PNP Ic=200mA VCE(sat)=400mV Vceo=40V hfe=100~300 SOT883

  • 数据手册
  • 价格&库存
LMBT3906N3T5G 数据手册
LMBT3906N3T5G S-LMBT3906N3T5G 3 1 General Purpose Transistors PNP Silicon 2 1. FEATURES ● We declare that the material of product compliance with SOT883 RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 3 COLLECTOR 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3906N3T5G 2A 10000/Tape&Reel 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -40 Vdc Collector–Base Voltage VCBO -40 Vdc Emitter–Base Voltage VEBO -5 Vdc IC -200 mAdc Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 250 mW 2 mW/ºC RΘJA 500 ºC/W TJ,Tstg −55∼+150 ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.A Apr. 2018 1/5 LMBT3906N3T5G, S-LMBT3906N3T5G General Purpose Transistors PNP Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage VBR(CEO) (IC = -1.0 mA, IB = 0) Collector–Base Breakdown Voltage VBR(CBO) (IC = -10 μA, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) (IE = -10 μA, IC = 0) Collector Cutoff Current ICEX ( VCE = -30 V, VEB = -3.0V) Base Cutoff Current IBL (VCE = -30 V, VEB = -3.0V) Min. Typ. Max. -40 - - -40 - - -5 - - - - -50 - - -50 60 - - Unit V V V nA nA ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = -0.1 mA, VCE = -1.0 V) (IC = -1.0 mA, VCE = -1.0 V) 80 - - 100 - 300 (IC = -50 mA, VCE = -1.0 V) 60 - - (IC = -100 mA, VCE = -1.0 V) 30 - - - - -0.25 - - -0.4 -0.65 - -0.85 - - -0.95 250 - - - - 4.5 - - 10 HFE (IC = -10 mA, VCE = -1.0 V) Collector–Emitter Saturation Voltage VCE(sat) (IC = -10 mA, IB = -1.0 mA) (IC = -50 mA, IB = -5.0 mA) V Base–Emitter Saturation Voltage VBE(sat) (IC = -10 mA, IB = -1.0 mA) (IC = -50 mA, IB = -5.0 mA) V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (IC = -10mA, VCE= -20V, f = 100MHz) Output Capacitance Cobo (VCB = -5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance Cibo (VEB = -0.5 V, IC = 0, f = 1.0 MHz) MHz pF pF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 V,VBE=0.5V, IC = 10mA, IB1 = -1.0 mA) td - - 35 tr - - 35 (VCC = -3.0 V, IC = -10 mA,IB1 = IB2 = -1.0 mA) ts - - 225 tf - - 75 ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.A Apr. 2018 2/5 LMBT3906N3T5G, S-LMBT3906N3T5G General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 10 1000 VCE=10V,f=1KHz Hfe, Current Gain C,Capacitance(pF) Cibo Cobo 100 10 1 1 0.1 1 10 VR,Reverse Voltage(V) 0.1 1 IC, Collector Current (mA) 10 Current Gain Capacitance 1 1000 VCE,Collecter Emitter Voltage(V) VCE=1V HFE, DC Current Gain 150℃ 25℃ -55℃ 100 IC=30mA 0.8 IC=100mA 0.6 0.4 IC=10mA 0.2 10 0.001 0.01 0.1 IC, Collector Current (A) 1 10 Collector Saturation Region DC Current Gain Leshan Radio Company, LTD. IC=1mA 0 0.001 0.01 0.1 1 IB,Base Current(mA) Rev.A Apr. 2018 3/5 LMBT3906N3T5G, S-LMBT3906N3T5G General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.4 0.45 IC/IB=10 VBEsat, Base-Emitter Saturation Voltage (V) VCEsat, Collector-Emitter Saturation Voltage (V) 0.50 0.40 0.35 0.30 150℃ 0.25 0.20 0.15 25℃ 0.10 -55℃ 0.05 0.00 0.001 0.01 0.1 IC, Collecotr Current (A) 1 IC/IB=10 1.2 1.0 -55℃ 0.8 25℃ 0.6 0.4 0.2 0.0001 150℃ 0.001 0.01 0.1 IC, Collector Current (A) 1 VBE(sat) vs. IC VCE(sat) vs. IC 1.4 VBE(on), Base-Emitter Voltage (V) VCE=1V 1.2 1.0 0.8 -55℃ 25℃ 0.6 0.4 0.2 0.0001 150℃ 0.001 0.01 0.1 1 IC, Collector Current (A) VBE(on) vs. IC Leshan Radio Company, LTD. Rev.A Apr. 2018 4/5 LMBT3906N3T5G, S-LMBT3906N3T5G General Purpose Transistors PNP Silicon 7.OUTLINE AND DIMENSIONS DIM D SOT883 MIN TYP MAX 0.95 1.00 1.05 E 0.55 0.60 0.65 e - 0.64 - e1 - 0.34 - L 0.19 0.24 0.29 L1 0.22 0.27 0.32 b 0.10 0.15 0.20 b1 0.44 0.49 0.54 A 0.43 0.48 0.53 A1 0 - 0.05 All Dimensions in mm 8.SOLDERING FOOTPRINT Dimensions c X X1 X2 Y Y1 Leshan Radio Company, LTD. Rev.A Apr. 2018 (mm) 0.70 1.10 0.40 0.40 0.20 0.55 5/5
LMBT3906N3T5G 价格&库存

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