LMBT3906N3T5G
S-LMBT3906N3T5G
3
1
General Purpose Transistors PNP Silicon
2
1. FEATURES
●
We declare that the material of product compliance with
SOT883
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
3 COLLECTOR
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906N3T5G
2A
10000/Tape&Reel
1
BASE
2
EMITTER
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
Limits
Unit
Collector–Emitter Voltage
VCEO
-40
Vdc
Collector–Base Voltage
VCBO
-40
Vdc
Emitter–Base Voltage
VEBO
-5
Vdc
IC
-200
mAdc
Symbol
Limits
Unit
Collector Current — Continuous
4. THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation,
PD
FR−5 Board (Note 1) @ TA = 25ºC
250
mW
2
mW/ºC
RΘJA
500
ºC/W
TJ,Tstg
−55∼+150
ºC
Derate above 25ºC
Thermal Resistance,
Junction–to–Ambient
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
Leshan Radio Company, LTD.
Rev.A Apr. 2018
1/5
LMBT3906N3T5G, S-LMBT3906N3T5G
General Purpose Transistors PNP Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
VBR(CEO)
(IC = -1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
VBR(CBO)
(IC = -10 μA, IE = 0)
Emitter–Base Breakdown Voltage
VBR(EBO)
(IE = -10 μA, IC = 0)
Collector Cutoff Current
ICEX
( VCE = -30 V, VEB = -3.0V)
Base Cutoff Current
IBL
(VCE = -30 V, VEB = -3.0V)
Min.
Typ.
Max.
-40
-
-
-40
-
-
-5
-
-
-
-
-50
-
-
-50
60
-
-
Unit
V
V
V
nA
nA
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(IC = -0.1 mA, VCE = -1.0 V)
(IC = -1.0 mA, VCE = -1.0 V)
80
-
-
100
-
300
(IC = -50 mA, VCE = -1.0 V)
60
-
-
(IC = -100 mA, VCE = -1.0 V)
30
-
-
-
-
-0.25
-
-
-0.4
-0.65
-
-0.85
-
-
-0.95
250
-
-
-
-
4.5
-
-
10
HFE
(IC = -10 mA, VCE = -1.0 V)
Collector–Emitter Saturation Voltage
VCE(sat)
(IC = -10 mA, IB = -1.0 mA)
(IC = -50 mA, IB = -5.0 mA)
V
Base–Emitter Saturation Voltage
VBE(sat)
(IC = -10 mA, IB = -1.0 mA)
(IC = -50 mA, IB = -5.0 mA)
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(IC = -10mA, VCE= -20V, f = 100MHz)
Output Capacitance
Cobo
(VCB = -5.0 V, IE = 0, f = 1.0 MHz)
Input Capacitance
Cibo
(VEB = -0.5 V, IC = 0, f = 1.0 MHz)
MHz
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = -3.0 V,VBE=0.5V, IC = 10mA, IB1 = -1.0 mA)
td
-
-
35
tr
-
-
35
(VCC = -3.0 V, IC = -10
mA,IB1 = IB2 = -1.0 mA)
ts
-
-
225
tf
-
-
75
ns
2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD.
Rev.A Apr. 2018
2/5
LMBT3906N3T5G, S-LMBT3906N3T5G
General Purpose Transistors PNP Silicon
6.ELECTRICAL CHARACTERISTICS CURVES
10
1000
VCE=10V,f=1KHz
Hfe, Current Gain
C,Capacitance(pF)
Cibo
Cobo
100
10
1
1
0.1
1
10
VR,Reverse Voltage(V)
0.1
1
IC, Collector Current (mA)
10
Current Gain
Capacitance
1
1000
VCE,Collecter Emitter Voltage(V)
VCE=1V
HFE, DC Current Gain
150℃
25℃
-55℃
100
IC=30mA
0.8
IC=100mA
0.6
0.4
IC=10mA
0.2
10
0.001
0.01
0.1
IC, Collector Current (A)
1
10
Collector Saturation Region
DC Current Gain
Leshan Radio Company, LTD.
IC=1mA
0
0.001
0.01
0.1
1
IB,Base Current(mA)
Rev.A Apr. 2018
3/5
LMBT3906N3T5G, S-LMBT3906N3T5G
General Purpose Transistors PNP Silicon
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
1.4
0.45
IC/IB=10
VBEsat, Base-Emitter Saturation Voltage (V)
VCEsat, Collector-Emitter Saturation Voltage (V)
0.50
0.40
0.35
0.30
150℃
0.25
0.20
0.15
25℃
0.10
-55℃
0.05
0.00
0.001
0.01
0.1
IC, Collecotr Current (A)
1
IC/IB=10
1.2
1.0
-55℃
0.8
25℃
0.6
0.4
0.2
0.0001
150℃
0.001
0.01
0.1
IC, Collector Current (A)
1
VBE(sat) vs. IC
VCE(sat) vs. IC
1.4
VBE(on), Base-Emitter Voltage (V)
VCE=1V
1.2
1.0
0.8
-55℃
25℃
0.6
0.4
0.2
0.0001
150℃
0.001
0.01
0.1
1
IC, Collector Current (A)
VBE(on) vs. IC
Leshan Radio Company, LTD.
Rev.A Apr. 2018
4/5
LMBT3906N3T5G, S-LMBT3906N3T5G
General Purpose Transistors PNP Silicon
7.OUTLINE AND DIMENSIONS
DIM
D
SOT883
MIN TYP
MAX
0.95
1.00
1.05
E
0.55
0.60
0.65
e
-
0.64
-
e1
-
0.34
-
L
0.19
0.24
0.29
L1
0.22
0.27
0.32
b
0.10
0.15
0.20
b1
0.44
0.49
0.54
A
0.43
0.48
0.53
A1
0
-
0.05
All Dimensions in mm
8.SOLDERING FOOTPRINT
Dimensions
c
X
X1
X2
Y
Y1
Leshan Radio Company, LTD.
Rev.A Apr. 2018
(mm)
0.70
1.10
0.40
0.40
0.20
0.55
5/5