LMBT3906TT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. LMBT3906TT1G S-LMBT3906TT1G ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking LMBT3906TT1G S-LMBT3906TT1G LMBT3906TT3G S-LMBT3906TT3G 2A 2A 2A 2A Shipping 3000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS SC-89 Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 200 mAdc Collector Current — Continuous 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR– 4 Board(1) T A =25 °C Derate above 25°C Characteristic PD 200 mW 1.6 mW/°C Thermal Resistance Junction to Ambient R θJA 600 °C/W Total Device Dissipation PD 300 mW R θJA T J , T stg 2.4 400 –55 to +150 mW/°C °C/W °C FR-4 Board (2), T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT3906TT1G = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 50 — – 50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) Collector Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. V (BR)CEO Vdc V (BR)CBO Vdc V (BR)EBO Vdc I BL nAdc I CEX nAdc 3. Pulse Width