LMBT3906WT1G

LMBT3906WT1G S-LMBT3906WT1G General Purpose Transistors PNP Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3906WT1G 2A 3000/Tape&Reel LMBT3906WT3G 2A 10000/Tape&Reel 3 COLLECTOR 1 BASE 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -40 Vdc Collector–Base Voltage VCBO -40 Vdc Emitter–Base Voltage VEBO -5 Vdc IC -200 mAdc Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 150 mW Derate above 25ºC 1.2 mW/ºC RΘJA 833 ºC/W TJ,Tstg −55∼+150 ºC Collector Current — Continuous 2 EMITTER 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 LMBT3906WT1G, S-LMBT3906WT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage VBR(CEO) (IC = -1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage VBR(CBO) (IC = -10 μAdc, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) (IE = -10 μAdc, IC = 0) Collector Cutoff Current ICEX ( VCE = -30 Vdc, VEB = -3.0Vdc) Base Cutoff Current IBL (VCE = -30 Vdc, VEB = -3.0Vdc) Min. Typ. Max. -40 - - Unit V V -40 - V -5 - nA - - -50 nA - - -50 60 - - (IC = -1.0 mAdc, VCE = -1.0 Vdc) 80 - - (IC = -10 mAdc, VCE = -1.0 Vdc) 100 - 300 (IC = -50 mAdc, VCE = -1.0 Vdc) 60 - - 30 - - (IC = -10 mAdc, IB = -1.0 mAdc) - - -0.25 (IC = -50 mAdc, IB = -5.0 mAdc) - - -0.4 ON CHARACTERISTICS (Note 2.) HFE DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage V VBE(sat) V (IC = -10 mAdc, IB = -1.0 mAdc) -0.65 - -0.85 (IC = -50 mAdc, IB = -5.0 mAdc) - - -0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) Output Capacitance Cobo (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) MHz 250 - pF - - 4.5 pF - - 10 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) td - - 35 tr - - 35 (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) ts - - 225 tf - - 75 ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/5 LMBT3906WT1G, S-LMBT3906WT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 10 1000 VCE=10V,f=1KHz Hfe, Current Gain C,Capacitance(pF) Cibo Cobo 100 10 1 1 0.1 1 10 VR,Reverse Voltage(V) 0.1 1 IC, Collector Current (mA) 10 Current Gain Capacitance 1 1000 VCE,Collecter Emitter Voltage(V) VCE=1V HFE, DC Current Gain 150℃ 25℃ -55℃ 100 IC=30mA 0.8 IC=100mA 0.6 0.4 IC=10mA 0.2 10 0.001 0.01 0.1 IC, Collector Current (A) 1 10 Collector Saturation Region DC Current Gain Leshan Radio Company, LTD. IC=1mA 0 0.001 0.01 0.1 1 IB,Base Current(mA) Rev.B Mar 2016 3/5 LMBT3906WT1G, S-LMBT3906WT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.4 0.45 IC/IB=10 VBEsat, Base-Emitter Saturation Voltage (V) VCEsat, Collector-Emitter Saturation Voltage (V) 0.50 0.40 0.35 0.30 150℃ 0.25 0.20 0.15 25℃ 0.10 -55℃ 0.05 0.00 0.001 0.01 0.1 IC, Collecotr Current (A) 1 IC/IB=10 1.2 1.0 -55℃ 0.8 25℃ 0.6 0.4 0.2 0.0001 150℃ 0.001 0.01 0.1 IC, Collector Current (A) 1 VBE(sat) vs. IC VCE(sat) vs. IC 1.4 VBE(on), Base-Emitter Voltage (V) VCE=1V 1.2 1.0 0.8 -55℃ 25℃ 0.6 0.4 0.2 0.0001 150℃ 0.001 0.01 0.1 1 IC, Collector Current (A) VBE(on) vs. IC Leshan Radio Company, LTD. Rev.B Mar 2016 4/5 LMBT3906WT1G, S-LMBT3906WT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF MIN NOM MAX 0.028REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 5/5