LMBT3946DW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), < 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3946DW1T1G = 46 MAXIMUM RATINGS Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base Voltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Electrostatic Discharge Symbol V CEO Value 40 -40 V CBO LMBT3946DW1T1G 6 5 4 1 2 3 SOT-363/SC-88 We declare that the material of product compliance with RoHS requirements. 3 2 1 Unit Vdc Q1 Q2 Vdc 60 -40 4 5 6 LMBT3946DW1T1* V EBO 6.0 -5.0 IC 200 -200 HBM>16000, MM>2000 Max 150 833 –55 to +150 Vdc *Q1 PNP Q2 NPN mAdc ORDERING INFORMATION Device Marking Shipping LMBT3946DW1T1G LMBT3946DW1T3G 46 46 3000Units/Reel 10000Units/Reel ESD V THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25°C Thermal Resistance Junction Rθ JA to Ambient Junction and Storage Temperature Range TJ,Ts t g Unit mW °C/W °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 1/14 LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1G ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) (IE = –10 µAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IIC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) (NPN) (PNP) (NPN) (PNP) VBE(sat) 0.65 – –0.65 – 0.85 0.95 –0.85 –0.95 (NPN) (NPN) (PNP) (NPN) (PNP) ICEX – – 50 –50 (NPN) (PNP) IB L – – 50 –50 nAdc Min Max Unit V(BR)CEO (NPN) (PNP) V(BR)CBO (NPN) (PNP) V (BR)EBO 6.0 –5.0 – – 60 –40 – – 40 –40 – – Vdc Vdc Vdc nAdc hFE 40 70 100 60 30 60 80 100 60 30 V CE(sat) – – – – 0.2 0.3 –0.25 –0.4 – – 300 – – – – 300 – – – (PNP) Vdc Vdc 2. Pulse Test: Pulse Width < 300 µs; Duty Cycle