LMBT4401LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT4401LT1G S-LMBT4401LT1G ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT-23 ●DEVICE MARKING AND ORDERING INFORMATION Shipping Device Marking 3000/Tape&Reel LMBT4401LT1G 2X LMBT4401LT3G 2X 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature Symbol VCEO VCBO VEBO IC Limits 40 60 6 600 Unit Vdc Vdc Vdc mAdc 225 1.8 556 mW mW/℃ ℃/W RΘJA 300 2.4 417 mW mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ PD RΘJA PD 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. June,2015 Rev.A 1/5 LESHAN RADIO COMPANY, LTD. LMBT4401LT1G,S-LMBT4401LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Symbol Characteristic Collector–Emitter Breakdown Voltage VBR(CEO) (IC = 1.0 mAdc, I B = 0) VBR(CBO) Collector–Base Breakdown Voltage (I C = 0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 0.1mAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 35 Vdc, V EB = 0.4Vdc) Base Cutoff Current IBEV ( V CE = 35 Vdc, V EB = 0.4Vdc) ON CHARACTERISTICS (Note 3.) DC Current Gain hFE (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 2.0 Vdc) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) SMALL–SIGNAL CHARACTERISTICS Symbol Characteristic Current–Gain — Bandwidth Product fT (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Collector–Base Capacitance Ccb (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance Ceb (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance hie (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio hre (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain hfe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance hoe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS (V CC = 30 Vdc, V EB= Delay Time td 2.0Vdc,I C = 150 mAdc, I Rise Time tr B1 = 15 mAdc) (V CC = 30 Vdc, I C = Storage Time ts 150 mAdc,I B1 = I B2 = Fall Time tf 15 mAdc) Min. Typ. Max. 40 – – 60 – – 6 – – – – 0.1 – – 0.1 20 40 80 100 40 – – – – – – – – 300 – – – – – 0.4 0.75 0.75 – – 0.95 1.2 Min. Typ. Max. 250 – – – – 6.5 – – 30 Unit V V V μA μA V V Unit MHz pF pF kΩ 1 15 X 10 0.1 – 40 –4 8 500 μmhos 1 30 – – 15 – – 20 – – 225 – – 30 ns 3. Pulse Test: Pulse Width