LMBT4401WT1G

LMBT4401WT1G S-LMBT4401WT1G General Purpose Transistors NPN Silicon SC70(SOT-323) 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring 3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 Base 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT4401WT1G 2X 3000/Tape&Reel LMBT4401WT3G 2X 10000/Tape&Reel 2 Emitter 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 40 V Collector–Base Voltage VCBO 60 V Emitter–Base Voltage VEBO 6 V IC 600 mA Symbol Limits Unit PD 150 mW RΘJA 833 ºC/W TJ,Tstg −55∼+150 ºC Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCE = 35 V, VEB = 0.4V) Base Cutoff Current (VCE = 35 V, VEB = 0.4V) Leshan Radio Company, LTD. Symbol Min. Typ. Max. Unit VBR(CEO) 40 - - V VBR(CBO) 60 - - V VBR(EBO) 6 - - V ICEX - - 0.1 μA IBEV - - 0.1 μA Rev.C Jul. 2020 1/5 LMBT4401WT1G, S-LMBT4401WT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)(Con.) ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) 20 - - 40 - - 80 - - (IC = 150 mA, VCE = 1.0 V) 100 - 300 (IC = 500 mA, VCE = 2.0 V) 40 - - - - 0.4 - - 0.75 0.75 - 0.95 - - 1.2 fT 250 - - MHz Ccb - - 6.5 pF Ceb - - 30 pF hie 1 - 15 KΩ hre 0.1 - 8 X10 hfe 40 - 500 hoe 1 - 30 td - - 15 tr - - 20 (IC = 1.0 mA, VCE = 1.0 V) HFE (IC = 10 mA, VCE = 1.0 V) Collector–Emitter Saturation Voltage VCE(sat) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) V Base–Emitter Saturation Voltage VBE(sat) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 20mA, VCE= 10V, f = 100MHz) Collector–Base Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) Small–Signal Current Gain (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) Output Admittance (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) -4 µmhos SWITCHING CHARACTERISTICS Delay Time (VCC = 30 V, VEB=2.0V,IC = 150 mA, IB1 = 15 mA) Rise Time ns Storage Time (VCC = 30 V, IC =150 mA,IB1 = IB2 =15 mA) Fall Time ts - - 225 tf - - 30 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 200 Ω + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 1.0 kΩ 1.0 kΩ 0 0 C S*< 10 pF C S* < 10 pF – 2.0V 200Ω –14 V