LMBT4403LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G S-LMBT4403LT1G • We declare that the material of product compliance with RoHS requirements. • S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device Marking LMBT4403LT1G S-LMBT4403LT1G LMBT4403LT3G S-LMBT4403LT3 Shipping 1 2T 3000/Tape & Reel 2T 10000/Tape & Reel 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating V CEO – 40 Vdc Collector–Base Voltage V CBO Emitter–Base Voltage V – 40 – 5.0 Vdc Vdc – 600 mAdc Collector Current — Continuous EBO IC 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR –5 Board (1) Symbol Max Unit PD 225 mW 1.8 mW/°C T A =25 °C Derate above 25°C 2 EMITTER Thermal Resistance Junction to Ambient R θJA 556 °C/W Total Device Dissipation PD 300 mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT4403LT1G = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 0.1 — – 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Vdc V (BR)CBO Vdc V (BR)EBO Vdc µAdc I BEV µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width