LMBT4403WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403WT1G S-LMBT4403WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Marking Device Shipping 1 LMBT4403WT1G S-LMBT4403WT1G LMBT4403WT3G S-LMBT4403WT3G 2T 3000/Tape & Reel 2T 10000/Tape & Reel 2 SC-70 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating V CEO Collector–Base Voltage Emitter–Base Voltage V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 600 mAdc Collector Current — Continuous 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature DEVICE MARKING LMBT4403WT1G = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 0.1 — – 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Vdc V (BR)CBO Vdc V (BR)EBO Vdc µAdc I BEV µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width