LMBT5551DW1T1G

LMBT5551DW1T1G S-LMBT5551DW1T1G DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 1. FEATURES ● We declare that the material of product compliance with SC88(SOT-363) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 C2 B1 E1 E2 B2 C1 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector-Emitter Voltage Parameter VCEO 160 V Collector-Base voltage VCBO 180 V Emitter-Base Voltage VEBO 6 V IC 600 mA Collector current--Continuous 4. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit PD 225 mW 1.8 mW/℃ RΘJA 556 ℃/W PD 300 2.4 mW mW/℃ RΘJA 417 ℃/W TJ,Tstg −55∼+150 ℃ Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Total Device Dissipation, Alumina Substrate, (Note 2)@ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.A Feb. 2020 1/5 LMBT5551DW1T1G,S-LMBT5551DW1T1G DUAL NPN Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector-Base Breakdown voltage (IC = 100µA, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 µA, IC = 0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO Min. Typ. Max. 160 - - Unit V V 180 - V 6 - - - - 50 nA - - 50 µA Collector Cutoff Current (VCB = 120 V, IE = 0) ICBO (VCB = 120 V, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO nA - - 50 80 80 - - - 250 30 - - ON CHARACTERISTICS DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) HFE (IC = 50 mA, VCE = 5.0 V) V Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(S) (IC = 50 mA, IB = 5.0 mA) - - 0.15 - - 0.2 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VBE(S) (IC = 50 mA, IB = 5.0 mA) - - 1 - - 1 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. Leshan Radio Company, LTD. Rev.A Feb. 2020 2/5 LMBT5551DW1T1G,S-LMBT5551DW1T1G DUAL NPN Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 150℃ 150℃ 125℃ 125℃ HFE DC Gain HFE DC Gain VCE=1.0V 25℃ 25℃ -55℃ -55℃ IC Collector Current(A) IC Collector Current(A) HFE vs. IC(VCE=5.0V) HFE vs. IC(VCE=1.0V) IB=1.5mA IC=1mA IC Collector Current(A) IB=1mA IB=500uA IB=400uA IB=300uA IB=200uA IB=100uA VCE Collector to Emittor Voltage(V) IB=2mA IC=30mA IC=50mA IC=100mA IC=90mA IC=70mA IB Base Current(A) VCE Collector to Emittor Voltage(V) VCE vs. IB IC vs. VCE Leshan Radio Company, LTD. IC=10mA Rev.A Feb. 2020 3/5 LMBT5551DW1T1G,S-LMBT5551DW1T1G DUAL NPN Transistor 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) -55℃ -55℃ 25℃ VBE(sat) (V) VBE(on) (V) 25℃ 125℃ 125℃ 150℃ VCE=5.0V 150℃ IC Collector Current(A) IC Collector Current(A) VBE(sat) vs. IC VBE(on) vs. IC Cibo 25℃ 150℃ Capacitance(pF) VCE(sat) (V) 125℃ -55℃ Cobo VR Reverse Voltage(V) IC Collector Current(A) Capacitance VCE(sat) vs. IC Leshan Radio Company, LTD. Rev.A Feb. 2020 4/5 LMBT5551DW1T1G,S-LMBT5551DW1T1G DUAL NPN Transistor 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Feb. 2020 5/5