LMBT5551LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ ƽ We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Shipping M1F 3000/Tape&Reel M1F 10000/Tape&Reel G1 3000/Tape&Reel G1 10000/Tape&Reel LMBT5550LT1G S-LMBT5550LT1G LMBT5550LT3G S-LMBT5550LT3G LMBT5551LT1G S-LMBT5551LT1G LMBT5551LT3G S-LMBT5551LT3G 1 2 SOT–23 MAXIMUM RATINGS 3 Rating Symbol Collector-Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector-Base Voltage Vdc 140 160 VCBO Emitter-Base Voltage Collector Current - Continuous 1 BASE Vdc 2 EMITTER 160 180 MMBT5550 MMBT5551 COLLECTOR Unit VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA PD Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 140 160 - 160 180 - 6.0 - - 100 50 100 50 - 50 60 80 60 80 20 30 250 250 - - 0.15 0.25 0.20 - 1.0 1.2 1.0 - 50 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO LMBT5550 LMBT5551 V(BR)CBO LMBT5550 LMBT5551 Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc Vdc V(BR)EBO Vdc ICBO LMBT5550 LMBT5551 LMBT5550 LMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Collector Emitter Cut-off (VCB = 10 V) (VCB = 75 V) LMBT5550 LMBT5551 LMBT5550 LMBT5551 LMBT5550 LMBT5551 hFE - VCE(sat) Both Types LMBT5550 LMBT5551 Vdc VBE(sat) Both Types LMBT5550 LMBT5551 Vdc ICES Both Types nA 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. Rev.O 2/5 LESHAN RADIO COMPANY, LTD. h FE, DC CURRENT GAIN (NORMALIZED) LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G 500 300 V CE = 1.0 V T J = +125°C 200 V CE = 5.0 V +25°C 100 –55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 1.0 T J = 25°C 0.8 I C = 1.0 mA 10 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 T J = 25°C V CE = 30 V 0.8 10 –1 T J = 125°C I C= I 10 –2 10 –3 V, VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (µA) 10 0 CES 75°C REVERSE FORWARD 25°C 10 –4 V BE(sat) @ I C /I B = 10 0.6 0.4 0.2 V CE(sat) @ I C /I B = 10 10 –5 0 –0.4 –0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages Rev.O 3/5 100 LESHAN RADIO COMPANY, LTD. 2.5 T J = –55°C to +135°C 2 1.5 1.0 10.2 V V BB θ VC for V CE(sat) 0.5 V in 100 0 –0.5 0.25 mF 10 ms –1.0 1.0 2.0 3.0 5.0 10 V out 20 30 50 100 V in t r , t f