LMBT6427LT1G

LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon LMBT6427LT1G S-LMBT6427LT1G declare that the material of product z We . compliance with RoHS requirements. z .S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device LMBT6427LT1G S-LMBT6427LT1G LMBT6427LT3G S-LMBT6427LT3G 3 Marking Shipping 1 1V 3000/Tape&Reel 1V 10000/Tape&Reel 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V EBO 12 Vdc 500 mAdc Collector Current — Continuous IC 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING (S-)LMBT6427LT1G = 1V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — Vdc V (BR)CBO 40 — Vdc V (BR)EBO 12 — Vdc I CES — 1.0 µAdc I CBO — 50 nAdc I EBO — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current (V CE = 25Vdc, I B = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G , S-LMBT6427LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 10,000 20,000 14,000 100,000 200,000 140,000 –– –– 1.2 1.5 V BE(sat) –– 2.0 Vdc V — 1.75 Vdc –– 7.0 pF –– 15 pF 1.3 — Vdc — 10 dB ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) hFE –– VCE(sat)(3) Vdc BE(on) SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C obo Input Capacitance C ibo (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain–High Frequency |h fe | (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) Noise Finure NF (V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz ) 3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0% RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G , S-LMBT6427LT1G NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz ~0 R S~ BANDWIDTH = 1.0 Hz 1.0 i n , NOISE CURRENT (pA) e n , VOLTAGE (nV) 200 100 10 µA 50 100 µA 20 I C = 1.0 mA 10 0.5 I C = 1.0 mA 0.3 0.2 100 µA 0.1 10 µA 0.07 0.05 0.03 0.02 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 10 50 k 100 k 20 50 100 200 500 1k 2k 5k 10 k 20 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 50 k 100 k 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) V T , TOTAL WIDEBAND NOISE VOLTAGE (nV) 0.7 I C = 10 µA 70 50 100 µA 30 10 10 µA 8.0 100 µA 6.0 I C = 1.0 mA 4.0 20 1.0 mA 2.0 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 R S , SOURCE RESISTANCE (kΩ) R S , SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure 1000 Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G , S-LMBT6427LT1G |h fe |, SMALL– SIGNAL CURRENT GAIN SMALL–SIGNAL CHARACTERISTICS 20 T J = 25°C 7.0 C ibo 5.0 C obo 3.0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 h FE , DC CURRENT GAIN 25°C 30 20 10 7.0 5.0 –55°C V CE = 5.0 V 3.0 2.0 10 20 30 50 70 100 200 300 500 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 T J = 25°C 2.5 I C = 10 mA 250 mA 500 mA 50 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I B , BASE CURRENT (µA) Figure 8. DC Current Gain Figure 9. Collector Saturation Region T J = 25°C 1.4 V BE(sat) @ I C /I B = 1000 1.2 V BE(on) @ V CE = 5.0 V 1.0 0.8 V CE(sat) @ I C /I B = 1000 0.6 10 3.0 I C , COLLECTOR CURRENT (mA) 1.6 V, VOLTAGE (VOLTS) 0.4 I C , COLLECTOR CURRENT (mA) 50 7.0 0.6 Figure 7. High Frequency Current Gain 100 70 5.0 1.0 0.8 Figure 6. Capacitance T J = 125°C 7.0 2.0 V R , REVERSE VOLTAGE (VOLTS) 200 5.0 V CE = 5.0 V f = 100 MHz T J = 25°C 40 V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 2.0 0.04 20 30 50 70 100 200 300 500 R θV , TEMPERATURE COEFFICIENTS (mV/°C) C, CAPACITANCE (pF) 10 4.0 –1.0 *APPLIES FOR I C / I B < h FE /3.0 –2.0 25°C TO 125°C *R θVC FOR V CE(sat) –55°C TO 25°C –3.0 25°C TO 125°C –4.0 θ VB FOR V BE –5.0 –55°C TO 25°C –6.0 5.0 7.0 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 500 Rev.O 4/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G , S-LMBT6427LT1G 1.0 r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 D = 0.5 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 0.03 Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t) Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, TIME (ms) Figure 12. Thermal Response FIGURE A t P PP PP t 1 1/f DUTY CYCLE =t 1 f = t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data Rev.O 5/6 10k LESHAN RADIO COMPANY, LTD. LMBT6427LT1G , S-LMBT6427LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 6/6