LMBTA13LT1G

LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring LMBTA13LT1G LMBTA14LT1G S-LMBTA13LT1G S-LMBTA14LT1G Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking Shipping (S-)LMBTA13LT1G 1M (S-)LMBTA14LT1G (S-)LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M (S-)LMBTA14LT3G 1N 10000/Tape & Reel 10000/Tape & Reel 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc IC 300 mAdc Collector Current — Continuous 1 2 SOT–23 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 Symbol Max Unit PD 225 mW 1.8 mW/°C R θJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C R θJA T J , T stg 1 BASE 2 EMITTER DEVICE MARKING (S-)LMBTA13LT1G = 1M; (S-)LMBTA14 LT1G = 1N; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 — Vdc I CBO — 100 nAdc I EBO — 100 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBTA13LT1G LMBTA14LT1G S-LMBTA13LT1G S-LMBTA14LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE LMBTA13 LMBTA14 LMBTA13 LMBTA14 (I C = 100mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) –– 5,000 10,000 10,000 20,000 — — — — VCE(sat) –– 1.5 Vdc V BE — 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) fT 125 — MHz 3. Pulse Test: Pulse Width