LMBTA42LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel LMBTA43LT1G M1E SOT-23 3000/Tape&Reel LMBTA43LT3G M1E SOT-23 10000/Tape&Reel LMBTA42LT1G LMBTA43LT1G S-LMBTA42LT1G S-LMBTA43LT1G 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA42 LMBTA43 Collector–Emitter Voltage V CEO 300 200 Vdc Collector–Base Voltage V CBO 300 200 Vdc Emitter–Base Voltage V EBO 6.0 6.0 Vdc Collector Current — Continuous IC SOT–23 Unit 500 3 COLLECTOR 1 BASE mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation FR– 5 Board, (1) 225 PD TA = 25°C Derate above 25°C 1.8 Thermal Resistance, Junction to Ambient R θJA 556 Total Device Dissipation 300 PD Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 Thermal Resistance, Junction to Ambient R θJA 417 –55 to +150 Junction and Storage Temperature T J , T stg ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol 2 EMITTER Unit mW mW/°C °C/W mW mW/°C °C/W °C Min Max 300 200 — — LMBTA42 300 — LMBTA43 200 — 6.0 — — 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C= 100 µAdc, I E= 0) V V Emitter–Base Breakdown Voltage V (I E= 100 µAdc, I C= 0) Collector Cutoff Current Vdc (BR)CEO LMBTA42 LMBTA43 Vdc (BR)CBO (BR)EBO µAdc I CBO ( V CB= 200Vdc, I E= 0) LMBTA42 ( V CB= 160Vdc, I E= 0) LMBTA43 Emitter Cutoff Current Vdc µAdc I EBO ( V EB= 6.0Vdc, I C= 0) LMBTA42 — 0.1 ( V EB= 4.0Vdc, I C= 0) LMBTA43 — 0.1 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width