LMBTA44LT1G

LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application that requires high voltage. 1 2 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to LMBTA94LT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 COLLECTOR 3 DEVICE MARKING LMBTA44LT1G = 3D 1 BASE S-LMBTA44LT1G = 3D 2 EMITTER Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 400 V VCEO Collector to Emitter Voltage ................................................................................... 400 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ...................................................................................................... 200 mA ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Collector cut-off current ICEO VCE=350V 5 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA HFE(1) VCE=10V, IC=10 mA 80 HFE(2) VCE=10V, IC=1mA 50 HFE(3) VCE=10V, IC=50 mA 40 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V VBE(sat) IC=10 mA, IB= 1 mA 0.9 V fT VCE=10V, IC=20mA DC current gain 300 Collector-emitter saturation voltage Base-emitter sataration voltage Transition frequency 50 MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMBTA44LT1G , S-LMBTA44LT1G Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 1000 VCE(sat) @ IC=10IB o Saturation Voltage (mV) 125 C 100 o o 25 C hFE 75 C hFE @ VCE=10V 10 1 o 125 C o 75 C 100 o 25 C 10 1 10 100 1000 0.1 Collector Current-IC (mA) 1 10 100 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current Capacitance & Reverse-Biased Voltage 1000 100 o Saturation Voltage (mV) 25 C Capacitance (pF) o 75 C o 125 C VBE(sat) @ IC=10IB 10 Cob 100 0.1 1 10 Collector Current-IC (mA) 100 1000 1 0.1 1 10 100 Reverse-Biased Voltage (V) Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LMBTA44LT1G , S-LMBTA44LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3