LMBTA55LT1G

LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating 3 Symbol Value LMBTA55 LMBTA56 Unit Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage V 1 2 Collector Current — Continuous EBO IC –4.0 Vdc –500 mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA PD 1.8 556 300 mW/°C °C/W mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C 1 BASE 2 EMITTER DEVICE MARKING (S-)LMBTA55LT1G = 2H; (S-)LMBTA56 LT1G = 2GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 ) V LMBTA55 LMBTA56 Emitter–Base Breakdown Voltage V Vdc (BR)CEO (BR)EBO –60 –80 — — –4.0 — Vdc — –0.1 µAdc (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0) LMBTA55 — –0.1 ( V CB = –80Vdc, I E= 0) LMBTA56 — –0.1 I CES µAdc I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width