LMBTA64LT1G

LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon LMBTA63LT1G LMBTA64LT1G We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage VEBO –10 Vdc IC –500 mAdc Collector Current – Continuous 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) DEVICE MARKING LMBTA63LT1G = 2U; LMBTA64LT1G = 2V THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 Symbol Max Unit Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient R
JA 556 °C/W PD 300 mW 2.4 mW/°C R
JA 417 °C/W TJ, Tstg –55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature BASE 1 EMITTER 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO –30 – Vdc Collector Cutoff Current (VCB = –30 Vdc) ICBO – –100 nAdc Emitter Cutoff Current (VEB = –10 Vdc) IEBO – –100 nAdc 5,000 10,000 10,000 20,000 – – – – OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –100 µAdc) ON CHARACTERISTICS DC Current Gain(3) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) hFE LMBTA63LT1G LMBTA64LT1G LMBTA63LT1G LMBTA64LT1G – Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc) VCE(sat) – –1.5 Vdc Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc) VBE(on) – –2.0 Vdc fT 125 – MHz SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 1/3 LESHAN RADIO COMPANY, LTD. LMBTA63LT1G LMBTA64LT1G hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 -10 V 25°C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55°C 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain TA = 25°C VBE(sat) @ IC/IB = 100 -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 Figure 3. “On” Voltage |h FE |, HIGH FREQUENCY CURRENT GAIN V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 -2.0 TA = 25°C -1.8 -1.6 -1.4 IC = -10 mA -50 mA -100 mA -175 mA -300 mA -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K IB, BASE CURRENT (µA) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 VCE = -5.0 V f = 100 MHz TA = 25°C 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 -1K Figure 4. High Frequency Current Gain 2/3 LESHAN RADIO COMPANY, LTD. LMBTA63LT1G LMBTA64LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3