LESHAN RADIO COMPANY, LTD.
Darlington Transistors
PNP Silicon
LMBTA63LT1G
LMBTA64LT1G
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
–30
Vdc
Collector–Base Voltage
VCBO
–30
Vdc
Emitter–Base Voltage
VEBO
–10
Vdc
IC
–500
mAdc
Collector Current – Continuous
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
LMBTA63LT1G = 2U; LMBTA64LT1G = 2V
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR 3
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
–55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
BASE
1
EMITTER 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
–30
–
Vdc
Collector Cutoff Current (VCB = –30 Vdc)
ICBO
–
–100
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
IEBO
–
–100
nAdc
5,000
10,000
10,000
20,000
–
–
–
–
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –100 µAdc)
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
hFE
LMBTA63LT1G
LMBTA64LT1G
LMBTA63LT1G
LMBTA64LT1G
–
Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
–
–1.5
Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
–
–2.0
Vdc
fT
125
–
MHz
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
1/3
LESHAN RADIO COMPANY, LTD.
LMBTA63LT1G LMBTA64LT1G
hFE , DC CURRENT GAIN (X1.0 K)
200
TA = 125°C
100
70
50
30
-10 V
25°C
VCE = -2.0 V
-5.0 V
20
10
7.0
5.0
-55°C
3.0
2.0
-0.3
-0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0
-10
-20
-30
-50
-70
-100
-200
-300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
TA = 25°C
VBE(sat) @ IC/IB = 100
-1.6
-1.2
VBE(on) @ VCE = -5.0 V
-0.8
VCE(sat) @ IC/IB = 1000
IC/IB = 100
-0.4
0
-0.3 -0.5
-1.0
-2 -3 -5
-10 -20 -30 -50
IC, COLLECTOR CURRENT (mA)
-100 -200 -300
Figure 3. “On” Voltage
|h FE |, HIGH FREQUENCY CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
-2.0
TA = 25°C
-1.8
-1.6
-1.4
IC = -10 mA -50 mA -100 mA -175 mA
-300 mA
-1.2
-1.0
-0.8
-0.6
-0.1-0.2 -0.5 -1 -2
-5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K
IB, BASE CURRENT (µA)
Figure 2. Collector Saturation Region
10
4.0
3.0
2.0
VCE = -5.0 V
f = 100 MHz
TA = 25°C
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0
-10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
-500
-1K
Figure 4. High Frequency Current Gain
2/3
LESHAN RADIO COMPANY, LTD.
LMBTA63LT1G LMBTA64LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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