LMBZ12VALT1G

LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT–23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. LMBZ6V8ALT1G Series 3 1 2 SOT–23 1.CATHODE 3.ANODE 2.CATHODE • SOT–23 Package Allows Either Two Separate Unidirectional • • • • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range – 3 V to 26 V Standard Zener Breakdown Voltage Range – 5.6 V to 33 V Peak Power – 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5. Waveform ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 µA Flammability Rating UL 94V–O We declare that the material of product compliance with RoHS requirements. Specification Features: MARKING DIAGRAM xxx xxx M = Device Code = Date Code ORDERING INFORMATION Device Package Shipping 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel 3000/10000Tape & Reel Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: LMBZ5V6ALT1G/T3G SOT–23 LMBZ6V2ALT1G/T3G LMBZ6V8ALT1G/T3G SOT–23 SOT–23 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. LMBZ9V1ALT1G/T3G SOT–23 LMBZ10VALT1G/T3G LMBZ12VALT1G/T3G LMBZ15VALT1G/T3G LMBZ18VALT1G/T3G LMBZ20VALT1G/T3G LMBZ27VALT1G/T3G LMBZ33VALT1G/T3G SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 SOT–23 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. LMBZ6V8ALT1G–1/7 M LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series MAXIMUM RATINGS Rating Peak Power Dissipation @ 1.0 ms (Note 1.) LMBZ5V6ALT1G thru LMBZ10VALT1G @ TL ≤ 25°C LMBZ12VALT1G thru LMBZ33VALT1G Total Power Dissipation on FR–5 Board (Note 2.) @ TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Power Dissipation on Alumina Substrate (Note 3.) @ TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Lead Solder Temperature – Maximum (10 Second Duration) 1. Non–repetitive current pulse per Figure 5. and derate above TA = 25°C per Figure 6. 2. FR–5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *Other voltages may be available upon request Symbol Ppk °PD° RθJA °PD° RθJA TJ, Tstg TL Value 24 40 225 1.8 556 300 2.4 417 – 55 to +150 260 Unit Watts °mW° mW/°C °C/W °mW mW/°C °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK VC VBR VRWM IF I IR VF IT V IPP Uni–Directional TVS LMBZ6V8ALT1G–2/7 LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) 24 WATTS (VF = 0.9 V Max @ IF = 10 mA) IR @ VRWM mA 5.0 0.5 Breakdown Voltage VBR (Note 4.) (V) Min 5.32 5.89 Nom 5.6 6.2 Max 5.88 6.51 @ IT mA 20 1.0 Max Zener Impedance (Note 5.) ZZT @ IZT Ω 11 – ZZK @ IZK Ω 1600 – mA 0.25 – VC @ IPP (Note 6.) VC V 8.0 8.7 IPP A 3.0 2.76 QVBR mV/5C 1.26 2.80 Device LMBZ5V6ALT1G LMBZ6V2ALT1G Device Marking 5A6 6A2 VRWM Volts 3.0 3.0 (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage Device Marking 6A8 9A1 10A VRWM Volts 4.5 6.0 6.5 IR @ VRWM mA 0.5 0.3 0.3 VBR (Note 4.) (V) Min 6.46 8.65 9.50 Nom 6.8 9.1 10 Max 7.14 9.56 10.5 @ IT mA 1.0 1.0 1.0 VC @ IPP (Note 6.) VC V 9.6 14 14.2 IPP A 2.5 1.7 1.7 QVBR mV/5C 3.4 7.5 7.5 Device LMBZ6V8ALT1G LMBZ9V1ALT1G LMBZ10VALT1G (VF = 1.1 V Max @ IF = 200 mA) VRWM Volts 8.5 12 14.5 17 22 26 IR @ VRWM nA 200 50 50 50 50 50 40 WATTS Breakdown Voltage VC @ IPP (Note 6.) @ IT mA 1.0 1.0 1.0 1.0 1.0 1.0 VC V 17 21 25 28 40 46 IPP A 2.35 1.9 1.6 1.4 1.0 0.87 QVBR mV/5C 7.5 12.3 15.3 17.2 24.3 30.4 VBR (Note 4.) (V) Min 11.40 14.25 17.10 19.00 25.65 31.35 Nom 12 15 18 20 27 33 Max 12.60 15.75 18.90 21.00 28.35 34.65 Device LMBZ12VALT1G LMBZ15VALT1G LMBZ18VALT1G LMBZ20VALT1G LMBZ27VALT1G LMBZ33VALT1G Device Marking 12A 15A 18A 20A 27A 33A 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 5. and derate per Figure 6. LMBZ6V8ALT1G–3/7 LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series TYPICAL CHARACTERISTICS 18 BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) 15 12 9 6 3 0 -40 IR (nA) 0 +50 TEMPERATURE (°C) +100 +150 1000 100 10 1 0.1 0.01 -40 +25 +85 TEMPERATURE (°C) +125 Figure 1. Typical Breakdown Voltage versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 320 280 PD , POWER DISSIPATION (mW) C, CAPACITANCE (pF) 240 200 160 120 80 40 0 0 1 BIAS (V) 2 3 5.6 V 300 250 200 150 100 50 0 Figure 2. Typical Leakage Current versus Temperature ALUMINA SUBSTRATE 15 V FR-5 BOARD 0 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 3. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) Figure 4. Steady State Power Derating Curve LMBZ6V8ALT1G–4/7 LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series TYPICAL CHARACTERISTICS PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP 2 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 175 200 tr ≤ 10 ms 100 VALUE (%) PEAK VALUE - IPP HALF VALUE 50 tP 0 0 1 2 3 t, TIME (ms) 4 Figure 5. Pulse Waveform LMBZ5V6ALT1 100 Ppk PEAK SURGE POWER (W) Ppk PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 100 Figure 6. Pulse Derating Curve LMBZ5V6ALT1 RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL UNIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 PW, PULSE WIDTH (ms) 100 1000 0.1 UNIDIRECTIONAL 1 1 10 PW, PULSE WIDTH (ms) 100 1000 Figure 7. Maximum Non–repetitive Surge Power, Ppk versus PW Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). Figure 8. Maximum Non–repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal zener voltage measured at the low test current used for voltage classification. LMBZ6V8ALT1G –5/7 LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT–23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B I/O C D FUNCTIONAL DECODER GND LMBZ5V6ALT1G THRU LMBZ33VALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS I/O CPU CLOCK LMBZ5V6ALT1G THRU LMBZ33VALT1G CONTROL BUS GND LMBZ5V6ALT1G THRU LMBZ33VALT1G LMBZ6V8ALT1G–6/7 LESHAN RADIO COMPANY, LTD. LMBZ6V8ALT1G Series SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LMBZ6V8ALT1G-7/7 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A 20.2mm Min (.795’’) 50mm Min (1.969’’) Full Radius G Inside Dimension Measured Near Hub Size 8 mm A Max 330mm (12.992’’) G 8.4mm+1.5mm, -0.0 (.33’’+.059’’, -0.00) T Max 14.4mm (.56’’) Reel Dimensions Metric Dimensions Govern –– English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) LESHAN RADIO COMPANY, LTD. Shipment Specification CPN LABEL LABEL LABEL 10Reel/Inner Box 30KPCS/Inner Box Dim(Unit:mm) 195mm*195mm*150mm 10 Reel 3000PCS/Reel 8000PCS/Reel (SOT-723,SOD-723) 80KPCS/Inner Box (SOT-723,SOD-723) Dim(Unit:mm) 460mm*400mm*420mm LABEL MARK 乐山无线电股份有限公司 Leshan Radio Company,Ltd. 12 Inner Box/Carton 360KPCS/Carton 960KPCS/Carton (SOT-723,SOD-723)