LMDL301T1G

LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V • Low Reverse Leakage – I R = 13 nAdc (Typ) • Device Marking: 4T • We declare that the material of product LMDL301T1G S-LMDL301T1G 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES 1 compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 CATHODE 2 PLASTIC SOD– 323 CASE 477 2 ANODE MAXIMUM RATINGS ( T J =125°C unless otherwise noted ) Symbol VR Rating Reverse Voltage Value 30 Unit Volts Max 200 Unit mW 1.57 635 mW/°C °C/W –55 to+150 °C THERMAL CHARACTERISTICS Symbol PD R θJA T J , T stg Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range *FR–5 Minimum Pad ORDERING INFORMATION Device LMDL301T1G S-LMDL301T1G LMDL301T3G S-LMDL301T3G Marking Shipping 4T 3000 / Tape & Reel 4T 10000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 15 V, f = 1.0MHz) Figure 1 Reverse Leakage (V R = 25 V) Figure 3 Forward Voltage (I F = 1.0 mAdc) Figure 4 Forward Voltage (I F = 10 mAdc) Figure 4 Symbol Min Typ Max Unit V (BR)R 30 — — Volts — 0.9 1.5 — 13 200 CT IR V F — 0.38 0.45 V F — 0.52 0.6 pF nAdc Vdc Vdc Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMDL301T1G , LMDL301T1G TYPICAL ELECTRICAL CHARACTERISTICS τ, MINORITY CARRIER LIFETIME (ps) C T , TOTAL CAPACITANCE (pF) 2.8 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 500 400 KRAKAUER METHOD 300 200 100 10 20 30 40 50 60 70 80 90 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 100 100 I F , FORWARD CURRENT (mA) 10 I R , REVERSE LEAKAGE (µA) 0 0 30 T A = 100°C 1.0 75°C 0.1 25°C 0.01 6.0 12 18 24 T A = 85°C 30 T A = –40°C 1.0 T A = 25°C 0.1 0.2 0.001 0 10 0.4 0.6 0.8 1.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) 1.2 CAPACITIVE CONDUCTION I R(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR STORAGE CONDUCTION SAMPLING BALLAST PADS NETWORK (PADS) OSCILLOSCOPE (50 Ω INPUT) DUT Figure 5. Krakauer Method of Measuring Lifetime Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LMDL301T1G , LMDL301T1G PACKAGE DIMENSIONS SOD–323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 Rev.O 3/3