LMDL914T1G

LMDL914T1G S-LMDL914T1G High –Speed Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD323(SC-76) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMDL914T1G 5D 3000/Tape&Reel LMDL914T3G 5D 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage Parameter VR 100 Vdc Forward Current IF 200 mAdc IFMS 500 mAdc Symbol Limits Unit Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−4 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.57 mW/ºC RΘJA 635 ºC/W TJ,Tstg −55∼+150 ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–4 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.A 21 Oct 2015 1/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (IR = 100μAdc) Symbol VBR Min. Typ. Max. Unit V 100 - - - - 25 nA - - 5 μA Reverse Voltage Leakage Current (VR = 20Vdc) IR (VR = 75Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) Non-Repetitive Peak Forward Current (suqare wave;Tj =25 ºC prior to surge t=1 μs) (t=1ms) (t=1s) Leshan Radio Company, LTD. CT VF trr IFSM Rev.A Oct 2015 pF - - 4 V - - 1 ns - - 4 - - 4 1 0.5 A 2/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1000 1000 150℃ 100 IF, Forward Current(mA) 100 IR,Reverse Current(uA) 150℃ 85℃ 10 25℃ -55℃ 85℃ 10 1 25℃ 0.1 1 -55℃ 0.01 0.1 0.001 0 0.2 0.4 0.6 0.8 VF, Forward Voltage(V) 1 1.2 Forward Characteristics 0 20 40 60 80 VR, Reverse Voltage(V) 100 Reverse Characteristics 0.6 f=1MHz C,Capacitor(pF) 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 VR, Reverse Voltage(V) 50 Capacitor Characteristics Leshan Radio Company, LTD. Rev.A Oct 2015 3/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Oct 2015 4/4