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LMDL914T3G

LMDL914T3G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD323

  • 描述:

    乐山无线电 SOD−323 VF: 1000mV I(o): -mA Pd: 200mW

  • 数据手册
  • 价格&库存
LMDL914T3G 数据手册
LMDL914T1G S-LMDL914T1G High –Speed Switching Diode SOD323(SC-76) 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. Device Marking Shipping LMDL914T1G 5D 3000/Tape&Reel LMDL914T3G 5D 10000/Tape&Reel 5D M 2. DEVICE MARKING AND ORDERING INFORMATION Month Code Marking 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage VR 100 Forward Current IF 200 V mA IFMS 500 mA Symbol Limits Unit Parameter Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC PD Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Thermal Resistance, Junction–to–Case Junction and Storage temperature RΘJA RΘJC TJ,Tstg 200 mW 1.57 mW/ºC 635 ºC/W 350 ºC/W −55∼+150 ºC 1. FR–4 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.D Sep. 2020 1/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (IR = 100μA) Symbol Min. Typ. Max. Unit VBR 100 - - V IR - - 25 nA - - 5 μA CT - - 4 pF VF - - 1 1 V trr - - 4 ns IFSM - - 4 1 0.5 A Reverse Voltage Leakage Current (VR = 20V) (VR = 75V) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mA) (IF = 50 mA) Reverse Recovery Time (IF = IR = 10 mA) Non-Repetitive Peak Forward Current (suqare wave;Tj =25 ºC prior to surge t=1 μs) (t=1ms) (t=1s) Leshan Radio Company, LTD. Rev.D Sep. 2020 2/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 6. ELECTRICAL CHARACTERISTICS CURVES 1000 1000 100 Reverse Current(uA) IF, Forward Current(mA) 150℃ 150℃ 100 85℃ 10 25℃ -55℃ 1 10 85℃ 1 0.1 25℃ 0.01 -55℃ 0.001 0.1 0.0001 0 0.2 0.4 0.6 0.8 VF, Forward Voltage(V) 1 1.2 0 20 40 60 80 100 VR Reverse Voltage(V) Forward Characteristics Reverse Characteristics 0.6 f=1MHz C,Capacitor(pF) 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 VR, Reverse Voltage(V) 50 Capacitor Characteristics Leshan Radio Company, LTD. Rev.D Sep. 2020 3/4 LMDL914T1G, S-LMDL914T1G High –Speed Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Sep. 2020 4/4 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.
LMDL914T3G 价格&库存

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