LMSD1819A-RT1G

LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features LMSD1819A-RT1G 3 1 2 • • • • High hFE, 210−460 Low VCE(sat), < 0.5 V Moisture Sensitivity Level 1 ESD Protection: Human Body Model > 4000 V Machine Model > 400 V • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc SC-70/SOT–323 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 −55 to +150 Unit mW °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Ordering Information Device LMSD1819A-RT1G LMSD1819A-RT1G Marking ZR ZR Shipping 3000/Tape&Reel 10000/Tape&Reel 1/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector-Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 − − 210 90 − Max − − − 0.1 0.1 340 − 0.5 Vdc Unit Vdc Vdc Vdc mA mA − PD , POWER DISSIPATION (MILLIWATTS) 250 IC, COLLECTOR CURRENT (mA) 200 150 100 50 0 −50 RqJA = 833°C/W 60 50 40 30 20 10 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) TA = 25°C 160 mA 140 mA 120 mA 100 mA 80 mA 60 mA 40 mA IB = 20 mA 8 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Figure 2. IC − VCE TA = 75°C DC CURRENT GAIN TA = − 25°C 100 TA = 25°C VCE = 10 V VCE , COLLECTOR-EMITTER VOLTAGE (V) 1000 2 TA = 25°C 1.5 1 0.5 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 Figure 3. DC Current Gain Figure 4. Collector Saturation Region 2/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G 900 800 Cib, INPUT CAPACITANCE (pF) COLLECTOR VOLTAGE (mV) 700 600 500 400 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 10 0 1 2 VEB (V) 3 4 TA = 25°C VCE = 5 V 18 16 14 12 20 IC, COLLECTOR CURRENT (mA) Figure 5. On Voltage Figure 6. Capacitance 7 6 C ob, CAPACITANCE (pF) 5 4 3 2 1 0 10 20 VCB (V) 30 40 Figure 7. Capacitance 3/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G SC−70 (SOT−323) D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 HE 1 2 E b e DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 2.00 0.079 0.095 A 0.05 (0.002) A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches 4/4