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LMUN2135LT1G

LMUN2135LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    偏置电阻晶体管 PNP - Pre-Biased 246mW 100mA 50V SOT-23

  • 数据手册
  • 价格&库存
LMUN2135LT1G 数据手册
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN2135LT1G S-LMUN2135LT1G This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. 3 1 2 SOT-23 (TO-236AB) • • • • Simplifies Circuit Design PIN 1 BASE Reduces Board Space (INPUT) Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Pb-Free • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 246 (Note 1.) 400 (Note 2.) 2.0 (Note 1.) 3.2 (Note 2.) mW °C/W Thermal Resistance – Junction-to-Ambient RθJA 508 (Note 1.) 311 (Note 2.) °C/W Thermal Resistance – Junction-to-Lead RθJL 174 (Note 1.) 208 (Note 2.) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION Device LMUN2135LT1G S-LMUN2135LT1G Marking A6M Shipping 3000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LMUN2135LT1G ;S-LMUN2135LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VBE = 6.0 V) IEBO – – 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 80 – – VCE(sat) – – 0.25 Vdc Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) VOL – – 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) VOH 4.9 – – Vdc Input Resistor R1 1.54 2.2 2.86 kΩ Resistor Ratio R1/R2 0.038 0.047 0.056 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Rev.O 2/4 LESHAN RADIO COMPANY, LTD. 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — LMUN2135LT1G;S-LMUN2135LT1G 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 35 40 45 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 Figure 4. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 2. DC Current Gain 12 10 25°C 10 1 50 TA = −25°C TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Input Voltage versus Output Current Rev.O 3/4 10 LESHAN RADIO COMPANY, LTD. LMUN2135LT1G;S-LMUN2135LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4
LMUN2135LT1G 价格&库存

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LMUN2135LT1G
  •  国内价格
  • 1+0.03465
  • 30+0.03341
  • 100+0.03218
  • 500+0.02970
  • 1000+0.02846
  • 2000+0.02772

库存:2950

LMUN2135LT1G
    •  国内价格
    • 50+0.13749
    • 500+0.11394
    • 3000+0.09602

    库存:1141