LMUN2231LT1G

LMUN2231LT1G S-LMUN2231LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network SOT23(TO-236) 1. FEATURES 3 COLLECTOR ● Simplifies circuit design ● Reduces board space and component count ● We declare that the material of product compliance with 1 BASE R2 RoHS requirements and Halogen Free. ● R1 2 EMITTER S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking R1(K) R2(K) LMUN2231LT1G A8H 2.2 2.2 LMUN2231LT3G A8H 2.2 2.2 Vin(V) -10~+12 -10~+12 Shipping 3000/Tape&Reel 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 50 V Collector–Base Voltage VCBO 50 V IC 100 mA Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 246 mW Derate above 25ºC 1.5 Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD RΘJA 508 mW/ºC ºC/W TJ,Tstg −55∼+150 ºC Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 @ Minimum Pad. Leshan Radio Company, LTD. Rev.C Sep. 2018 1/5 LMUN2231LT1G, S-LMUN2231LT1G Bias Resistor Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Symbol VBR(CEO) VBR(CBO) ICBO ICEO IEBO Min. Typ. Max. 50 - - Unit V V 50 - nA - - 100 nA - - 500 mA - - 2.3 8 - - - - 0.25 ON CHARACTERISTICS (Note 2.) DC Current Gain HFE (IC = 5.0 mA, VCE = 10 V) Collector–Emitter Saturation Voltage VCE(sat) (IC = 10 mA, IB = 5 mA) Output Voltage (on) VOL (VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ) Output Voltage (on) V V - - 0.2 4.9 - - VOH (VCC = 5.0 V, VB = 0.25 V, RL =1.0KΩ) V Input Resistor R1 1.5 - 2.9 Resistor Ratio R1/R2 0.8 - 1.2 KΩ 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% Leshan Radio Company, LTD. Rev.C Sep. 2018 2/5 LMUN2231LT1G, S-LMUN2231LT1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 1 160 25℃ IC/IB=10 VCE=10V 140 85℃ 120 85℃ VCESAT(V) HFE 100 80 150℃ 60 150℃ 0.1 -55℃ -55℃ 40 25 ℃ 20 0 0.0001 0.01 0.001 0.01 0.1 0 0.02 0.04 IC(A) 0.06 IC(A) 0.08 0.1 VCESAT vs. IC HFE vs. IC 0.1 10 150℃ 25℃ 25℃ IC,Collector Current(A) VBE,Base to Emittor(V) 85℃ - 55℃ 1 0.01 -55℃ 0.001 150℃ 85℃ Vo=5V Vo=0.2V 0.1 0.0001 0 0.02 0.04 0.06 0.08 IC,Collector Current(A) 0.5 1 VBE,Base to Emittor(V) 1.5 VBE vs. IC VBE vs. IC Leshan Radio Company, LTD. 0 Rev.C Sep. 2018 3/5 LMUN2231LT1G, S-LMUN2231LT1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 4 f=1MHz Ta=25℃ 3.5 Cobo,Capacitor(pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 VR,Reverse Voltage(V) 50 CT vs. VR Leshan Radio Company, LTD. Rev.C Sep. 2018 4/5 LMUN2231LT1G, S-LMUN2231LT1G Bias Resistor Transistor 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 CT vs. VR NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Sep. 2018 5/5