LMUN5211T1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G Series NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications. • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC–70/SOT–323 package can be soldered using wave or 1 2 SC-70 / SOT-323 PIN 1 R1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. • Pb-Free package is available MARKINGDIAGRAM 8X M DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. 8x = Specific Device Code x = (See Marking Table) M= Date Code MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 202 (Note 1.) 310 (Note 2.) 1.6 (Note 1.) 2.5 (Note 2.) mW Rating Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance – Junction-to-Ambient RθJA 618 (Note 1.) 403 (Note 2.) °C/W Thermal Resistance – Junction-to-Lead RθJL 280 (Note 1.) 332 (Note 2.) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Rev.O 1/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series DEVICE MARKING RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) Shipping LMUN5211T1G SC-70/SOT-323 8A 10 10 3000/Tape&Reel LMUN5211T3G SC-70/SOT-323 8A 10 10 10000/Tape&Reel LMUN5212T1G SC-70/SOT-323 8B 22 22 3000/Tape&Reel LMUN5212T3G SC-70/SOT-323 8B 22 22 10000/Tape&Reel LMUN5213T1G SC-70/SOT-323 8C 47 47 3000/Tape&Reel LMUN5213T3G SC-70/SOT-323 8C 47 47 10000/Tape&Reel LMUN5214T1G SC-70/SOT-323 8D 10 47 3000/Tape&Reel LMUN5214T3G SC-70/SOT-323 8D 10 47 10000/Tape&Reel LMUN5215T1G(Note 3) SC-70/SOT-323 8E 10 Ğ 3000/Tape&Reel LMUN5215T3G SC-70/SOT-323 8E 10 Ğ 10000/Tape&Reel LMUN5216T1G(Note 3) SC-70/SOT-323 8F 4.7 Ğ 3000/Tape&Reel LMUN5216T3G SC-70/SOT-323 8F 4.7 Ğ 10000/Tape&Reel LMUN5230T1G(Note 3) SC-70/SOT-323 8G 1 1 3000/Tape&Reel LMUN5230T3G SC-70/SOT-323 8G 1 1 10000/Tape&Reel LMUN5231T1G(Note 3) SC-70/SOT-323 8H 2.2 2.2 3000/Tape&Reel LMUN5231T3G SC-70/SOT-323 8H 2.2 2.2 10000/Tape&Reel LMUN5232T1G(Note 3) SC-70/SOT-323 8J 4.7 4.7 3000/Tape&Reel LMUN5232T3G SC-70/SOT-323 8J 4.7 4.7 10000/Tape&Reel LMUN5233T1G(Note 3) SC-70/SOT-323 8K 4.7 47 3000/Tape&Reel LMUN5233T3G SC-70/SOT-323 8K 4.7 47 10000/Tape&Reel LMUN5234T1G(Note 3) SC-70/SOT-323 8L 22 47 3000/Tape&Reel LMUN5234T3G SC-70/SOT-323 8L 22 47 10000/Tape&Reel LMUN5235T1G(Note 3) SC-70/SOT-323 8M 2.2 47 3000/Tape&Reel LMUN5235T3G SC-70/SOT-323 8M 2.2 47 10000/Tape&Reel LMUN5236T1G(Note 3) SC-70/SOT-323 8N 100 100 3000/Tape&Reel LMUN5236T3G SC-70/SOT-323 8N 100 100 10000/Tape&Reel LMUN5237T1G(Note 3) SC-70/SOT-323 8P 47 22 3000/Tape&Reel LMUN5237T3G SC-70/SOT-323 8P 47 22 10000/Tape&Reel 3. New devices. Updated curves to follow in subsequent data sheets. Rev.O 2/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 – – – – – – – – – – – – – – VCE(sat) – – 0.25 – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS LMUN5211T1G LMUN5212T1G LMUN5213T1G LMUN5214T1G LMUN5215T1G LMUN5216T1G LMUN5230T1G LMUN5231T1G LMUN5232T1G LMUN5233T1G LMUN5234T1G LMUN5235T1G LMUN5236T1G LMUN5237T1G ON CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LMUN5211T1G LMUN5212T1G LMUN5213T1G LMUN5214T1G LMUN5215T1G LMUN5216T1G LMUN5230T1G LMUN5231T1G LMUN5232T1G LMUN5233T1G LMUN5234T1G LMUN5235T1G LMUN5236T1G LMUN5237T1G Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LMUN5230T1/LMUN5231T1 (IC = 10 mA, IB = 1 mA) LMUN5215T1/LMUN5216T1/ LMUN5232T1/LMUN5233T1/LMUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) VOL LMUN5211T1G LMUN5212T1G LMUN5214T1G LMUN5215T1G LMUN5216T1G LMUN5230T1G LMUN5231T1G LMUN5232T1G LMUN5233T1G LMUN5234T1G LMUN5235T1G LMUN5213T1G LMUN5236T1G LMUN5237T1G Vdc Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Rev.O 3/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 – – Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kΩ 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 5.) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) LMUN5230T1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) LMUN5215T1G LMUN5216T1G LMUN5233T1G Input Resistor Resistor Rati LMUN5211T1G LMUN5212T1G LMUN5213T1G LMUN5214T1G LMUN5215T1G LMUN5216T1G LMUN5230T1G LMUN5231T1G LMUN5232T1G LMUN5233T1G LMUN5234T1G LMUN5235T1G LMUN5236T1G LMUN5237T1G LMUN5211T1G/LMUN5212T1G/LMUN5213T1G/ LMUN5236T1G LMUN5214T1G LMUN5215T1G/LMUN5216T1G LMUN5230T1G/LMUN5231T1G/LMUN5232T1G LMUN5233T1G LMUN5234T1G LMUN5235T1G LMUN5237T1G R1/R2 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 –50 RθJA = 403°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Rev.O 4/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series 1 1000 IC/IB = 10 h FE , DC CURRENT GTIN (NORMTLIZED) VCE(sat) , MTXIMUM COLLECTOR VOLTTGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1G TT Ă=Ă-25°C 25°C 0.1 75°C 0 20 40 IC, COLLECTOR CURRENT (mT) TT Ă=Ă75°C 25°C -25°C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mT) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mT) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TT = 25°C TT Ă=Ă-25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BITS VOLTTGE (VOLTS) 50 0.001 Figure 4. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTTGE (VOLTS) 8 VO = 0.2 V TT Ă=Ă-25°C 25°C 75°C 1 0.1 0 10 9 Figure 5. Output Current versus Input Voltage 10 V in , INPUT VOLTTGE (VOLTS) Cob , CTPTCITTNCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mT) 50 Figure 6. Input Voltage versus Output Current Rev.O 5/10 10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series 1000 1 h FE, DC CURRENT GTIN (NORMTLIZED) VCE(sat) , MTXIMUM COLLECTOR VOLTTGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5212T1G IC/IB = 10 25°C TT Ă=Ă-25°C 0.1 75°C 0.01 0.001 0 20 -25°C 100 1 10 100 IC, COLLECTOR CURRENT (mT) IC, COLLECTOR CURRENT (mT) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mT) f = 1 MHz IE = 0 V TT = 25°C 2 1 75°C 25°C TT Ă=Ă-25°C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BITS VOLTTGE (VOLTS) 0.001 Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTTGE (VOLTS) 8 VO = 0.2 V TT Ă=Ă-25°C 10 25°C 75°C 1 0.1 0 10 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTTGE (VOLTS) Cob , CTPTCITTNCE (pF) TT Ă=Ă75°C 25°C 10 50 40 VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mT) Figure 11. Input Voltage versus Output Current Rev.O 6/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series 10 1000 IC/IB = 10 1 25°C TT Ă=Ă-25°C 75°C 0.1 0.01 0 h FE , DC CURRENT GTIN (NORMTLIZED) VCE(sat) , MTXIMUM COLLECTOR VOLTTGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5213T1G TT Ă=Ă75°C 25°C -25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mT) VCE = 10 V 1 Figure 12. VCE(sat) versus IC 1 100 25°C IC, COLLECTOR CURRENT (mT) 75°C 0.6 0.4 0.2 TT Ă=Ă-25°C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BITS VOLTTGE (VOLTS) 0.001 0 2 4 6 Vin, INPUT VOLTTGE (VOLTS) 8 100 VO = 0.2 V TT Ă=Ă-25°C 10 25°C 75°C 1 0.1 0 10 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTTGE (VOLTS) Cob , CTPTCITTNCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TT = 25°C 0.8 100 10 IC, COLLECTOR CURRENT (mT) 20 30 40 50 IC, COLLECTOR CURRENT (mT) Figure 16. Input Voltage versus Output Current Rev.O 7/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series 300 1 IC/IB = 10 h FE, DC CURRENT GTIN (NORMTLIZED) VCE(sat) , MTXIMUM COLLECTOR VOLTTGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5214T1G TT Ă=Ă-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mT) 25°C 200 -25°C 150 100 50 0 80 TT Ă=Ă75°C VCE = 10 250 1 2 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TT = 25°C 3 TT Ă=Ă75°C IC, COLLECTOR CURRENT (mT) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BITS VOLTTGE (VOLTS) 40 Figure 19. Output Capacitance 45 50 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTTGE (VOLTS) 8 Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTTGE (VOLTS) Cob , CTPTCITTNCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mT) TT Ă=Ă-25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mT) 40 50 Figure 21. Input Voltage versus Output Current Rev.O 8/10 10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLTTED LOTD FROM µP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOTD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source Rev.O 9/10 LESHAN RADIO COMPANY, LTD. LMUN5211T1G Series SC-70 / SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N PIN 1. BASE 2. EMITTER 3. COLLECTOR K H INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm Rev.O 10/10