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LMUN5213DW1T1G

LMUN5213DW1T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-363

  • 描述:

    双偏置电阻晶体管带有单片偏置电阻网络的NPN硅表面贴装晶体管

  • 数据手册
  • 价格&库存
LMUN5213DW1T1G 数据手册
LMUN5213DW1T1G S-LMUN5213DW1T1G Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SC88(SOT-363) 1. FEATURES ● Simplifies circuit design ● Reduces board space. ● Reduces Component Count ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking LMUN5213DW1T1G 7C R1(K) R2(K) 47 47 3000/Tape&Reel Shipping LMUN5213DW1T3G 7C 47 47 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 50 V Collector–Base Voltage VCBO VEBO 50 6 V IC 100 V mA Symbol PD Limits Unit 187 mW 1.5 mW/ºC RΘJA 670 ºC/W Symbol PD Limits Unit (Note 1) @ TA = 25ºC 250 mW Derate above 25ºC Thermal Resistance, 2 mW/ºC RΘJA 493 ºC/W RΘJL 188 ºC/W TJ,Tstg −55∼+150 ºC Emitter–Base Breakdown Voltage Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter (One Junction Heated) Total Device Dissipation, (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Parameter (Both Junctions Heated) Total Device Dissipation, Junction–to–Ambient(Note 1) Thermal Resistance, Junction–to–Lead(Note 1) Junction and Storage temperature 1. FR–4 @ Minimum Pad Leshan Radio Company, LTD. Rev.B Mar. 2021 1/5 LMUN5213DW1T1G, S-LMUN5213DW1T1G Bias Resistor Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0) Emitter–Base Breakdown Voltage (IE = 200 μA, IC = 0) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 5.0 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL =1.0KΩ) Output Voltage (on) (VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ) Input Resistor Resistor Ratio Symbol Min. Typ. Max. Unit VBR(CEO) 50 - - V VBR(CBO) 50 - - V VBR(EBO) 6 - - V ICBO - - 100 nA ICEO - - 500 nA IEBO - - 0.1 mA HFE 80 140 - VCE(sat) - - 0.25 V VOL - - 0.2 V VOH 4.9 - - V R1 32.9 0.8 47 1 61.1 1.2 KΩ R1/R2 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% Leshan Radio Company, LTD. Rev.B Mar. 2021 2/5 LMUN5213DW1T1G, S-LMUN5213DW1T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 1000 1 VCE=10V IC/IB=10 85℃ VCE(sat) (V) HFE Dc Gain 150℃ 25℃ 100 -55℃ 25℃ 85℃ 0.1 150℃ -55℃ 10 0.001 0.01 0.01 IC Collector Current(A) 0.1 0 0.01 0.02 IC Collector Current(A) HFE vs. IC 0.03 VCE(sat) vs. IC 1E-01 100 VO=0.2V IC Collector Current(A) Vin Input Voltage(V) 1E-02 10 -55℃ 25℃ 1 150℃ 85℃ -55℃ 1E-03 150℃ 25℃ 85℃ 1E-04 1E-05 VO=5V 0.1 1E-06 0 0.01 0.02 0.03 IC Collector Current(A) 0.04 0.05 Vin vs. IC Leshan Radio Company, LTD. 0 1 2 3 Vin Input Voltage(V) 4 5 IC vs. Vin Rev.B Mar. 2021 3/5 LMUN5213DW1T1G, S-LMUN5213DW1T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 3 f=1.0MHz Ta=25℃ Cobo(pF) 3 2 2 1 0 10 20 30 40 VT Reverse Voltage(V) 50 Capacitance Leshan Radio Company, LTD. Rev.B Mar. 2021 4/5 LMUN5213DW1T1G, S-LMUN5213DW1T1G Bias Resistor Transistor 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar. 2021 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.
LMUN5213DW1T1G 价格&库存

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LMUN5213DW1T1G
  •  国内价格
  • 20+0.45220
  • 100+0.26980
  • 800+0.18880
  • 3000+0.13490
  • 6000+0.12810
  • 30000+0.11870

库存:62568

LMUN5213DW1T1G
  •  国内价格
  • 1+0.18199
  • 30+0.17549
  • 100+0.16899
  • 500+0.15599
  • 1000+0.14949
  • 2000+0.14559

库存:0