LMUN5213T1G

LMUN5213T1G S-LMUN5213T1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 1. FEATURES ● Simplifies circuit design ● Reduces board space and component count ● The SC–70/SOT–323 package can be soldered using wave or reflow. ● The modified gull–winged leads absorb thermal stress during soldering SC70(SOT-323) eliminating the possibility of damage to the die. ● We declare that the material of product compliance with 3 COLLECTOR RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 1 BASE R1 qualified and PPAP capable. R2 2. DEVICE MARKING AND RESISTOR VALUES R1(K) R2(K) 2 EMITTER Shipping Device Marking LMUN5213T1G 8C 47 47 3000/Tape&Reel LMUN5213T3G 8C 47 47 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 50 Collector–Base Voltage VCBO 50 V V IC 100 mA Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, RΘJA 202 mW 1.6 mW/ºC 618 ºC/W Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 @ Minimum Pad. Leshan Radio Company, LTD. Rev.A Oct . 2018 1/5 LMUN5213T1G, S-LMUN5213T1G Bias Resistor Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Symbol VBR(CEO) VBR(CBO) ICBO ICEO IEBO Min. Typ. Max. 50 - - Unit V V 50 - nA - - 100 nA - - 500 mA - - 0.1 80 140 320 - - 0.25 ON CHARACTERISTICS (Note 2.) DC Current Gain HFE (IC = 5.0 mA, VCE = 10 V) Collector–Emitter Saturation Voltage VCE(sat) (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) VOL (VCC = 5.0 V, VB = 3.5 V, RL =1.0KΩ) Output Voltage (on) V V - - 0.2 4.9 - - VOH (VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ) V Input Resistor R1 32.9 47 61.1 Resistor Ratio R1/R2 0.8 1 1.2 KΩ 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% Leshan Radio Company, LTD. Rev.A Oct . 2018 2/5 LMUN5213T1G, S-LMUN5213T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 350 1 IC/IB=10 VCE=10V 300 HFE,DC Current Gain 150℃ VCE(sat),Saturation Voltage(V) 150℃ 85℃ 0.1 85℃ 250 25℃ 200 150 -55℃ 25℃ 100 50 -55℃ 0.01 0 0 0.01 0.02 0.03 0.04 0.05 IC,Collector Current(A) 0.06 0 0.02 0.04 0.06 IC,Collector Current(A) DC Current Gain VCE(sat) vs.IC 3.5 1.E+00 Vo=5V Ta=25℃ f=1MHz IE=0A 3.0 150℃ 1.E-01 IC,Output Current(A) 2.5 Cob (pF) 0.08 2.0 1.5 1.0 1.E-02 -55℃ 25℃ 1.E-03 85℃ 1.E-04 1.E-05 0.5 0.0 1.E-06 0 10 20 30 40 50 VCB Verse(cb) Voltage (V) 2 4 6 Vin,Input Voltage(V) 8 IC vs. Vin Cobo vs. VCB Leshan Radio Company, LTD. 0 Rev.A Oct . 2018 3/5 LMUN5213T1G, S-LMUN5213T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1 Vo=0.2V IC,Output Current(A) 0.1 150℃ 0.01 -55℃ 25℃ 0.001 85℃ 0.0001 0 5 10 Vin,Input Voltage(V) 15 IC vs. Vin Leshan Radio Company, LTD. Rev.A Oct . 2018 4/5 LMUN5213T1G, S-LMUN5213T1G Bias Resistor Transistor 7.OUTLINE AND DIMENSIONS SC70 DIM MIN NOR MAX A 0.80 0.95 1.00 A1 0.00 0.05 0.7 REF 0.10 0.30 0.35 0.40 A2 b c 0.10 0.15 0.25 D 1.80 2.05 2.20 E 1.15 1.30 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.20 0.35 0.56 He 2.00 2.10 2.40 ALL Dimension in mm 8.SOLDERING FOOTPRINT SC70 Leshan Radio Company, LTD. Rev.A Oct . 2018 DIM MIN A 1.90 B 0.65 C 0.65 X 0.70 Y 0.90 5/5