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LMUN5214T1G

LMUN5214T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-323-3

  • 描述:

    通用三极管 SC70-3 NPN VCEO=50V IC=100mA

  • 数据手册
  • 价格&库存
LMUN5214T1G 数据手册
LMUN5214T1G S-LMUN5214T1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network SC70(SOT-323) 1. FEATURES 3 COLLECTOR ● Simplifies circuit design ● Reduces board space and component count ● The SC–70/SOT–323 package can be soldered using wave or reflow. ● The modified gull–winged leads absorb thermal stress during soldering 1 BASE eliminating the possibility of damage to the die. ● R1 R2 We declare that the material of product compliance with 2 EMITTER RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking LMUN5214T1G 8D R1(K) R2(K) 10 47 LMUN5214T3G 8D 10 47 Vin(V) -6 ~+40 -6 ~+40 Shipping Symbol Limits Unit Collector–Emitter Voltage VCEO 50 V Collector–Base Voltage VCBO 50 V IC 100 mA Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 202 mW Derate above 25ºC 1.6 mW/ºC RΘJA 618 ºC/W TJ,Tstg −55∼+150 ºC 3000/Tape&Reel 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–4 @ Minimum Pad. Leshan Radio Company, LTD. Rev.C Feb. 2023 1/5 LMUN5214T1G, S-LMUN5214T1G Bias Resistor Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Symbol Min. Typ. Max. Unit VBR(CEO) 50 - - V VBR(CBO) 50 - - V ICBO - - 100 nA ICEO - - 500 nA IEBO - - 0.2 mA HFE 80 140 - VCE(sat) - - 0.25 V VOL - - 0.2 V VOH 4.9 - - V Vi(off) - - 0.5 V Vi(on) 2 - - V R1 7 10 13 KΩ R1/R2 0.17 0.21 0.25 ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 5.0 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ) Input Voltage(off) (VCE=5.0V,IC=100µA) Input Voltage(on) (VCE=0.2V,IC=5.0mA) Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% Leshan Radio Company, LTD. Rev.C Feb. 2023 2/5 LMUN5214T1G, S-LMUN5214T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 100 1000 75℃ 25℃ VCE=10V Vo=0.2V 125℃ 100 10 -25℃ 75℃ HFE Vin(V) 25℃ -25℃ 10 1 125℃ 1 0.0001 0.001 0.1 0.0001 0.01 0.001 0.01 IC(A) IC(A) HFE vs. IC Vin vs. IC 1 75℃ Vo=5V IC/IB=10 0.01 25℃ IC(A) 125℃ VCE(sat) (V) 25℃ 75℃ -25℃ 0.001 125℃ 0.1 -25℃ 0.0001 0.00001 0 1 2 3 4 5 0.01 0.01 0.03 0.04 IC(A) Vin(V) VCE(sat) vs. IC IC vs. Vin Leshan Radio Company, LTD. 0.02 Rev.C Feb. 2023 3/5 LMUN5214T1G, S-LMUN5214T1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 5 f=1MHz Ta=25℃ Cobo(pF) 4 3 2 1 0 10 20 30 VCB(V) 40 50 Capacitance Leshan Radio Company, LTD. Rev.C Feb. 2023 4/5 LMUN5214T1G, S-LMUN5214T1G Bias Resistor Transistor 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A A1 A2 b c D E e e1 L HE 0.80 0.00 NOM MAX 0.90 1.00 0.05 0.10 0.70REF 0.30 0.35 0.40 0.10 0.18 0.25 1.80 2.10 2.20 1.15 1.24 1.35 1.20 1.30 1.40 0.65REF 0.20 0.38 0.56 2.00 2.10 2.40 MIN NOM MAX 0.032 0.035 0.0394 0 0.002 0.004 0.028REF 0.012 0.014 0.016 0.004 0.007 0.01 0.071 0.083 0.087 0.045 0.049 0.053 0.047 0.051 0.055 0.026REF 0.008 0.015 0.022 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Feb. 2023 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.
LMUN5214T1G 价格&库存

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LMUN5214T1G
    •  国内价格
    • 20+0.12203
    • 200+0.09744
    • 600+0.08378
    • 3000+0.07558
    • 9000+0.06848

    库存:10457