LMUN5214T1G
S-LMUN5214T1G
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
SC70(SOT-323)
1. FEATURES
3 COLLECTOR
●
Simplifies circuit design
●
Reduces board space and component count
●
The SC–70/SOT–323 package can be soldered using wave or reflow.
●
The modified gull–winged leads absorb thermal stress during soldering
1 BASE
eliminating the possibility of damage to the die.
●
R1
R2
We declare that the material of product compliance with
2 EMITTER
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LMUN5214T1G
8D
R1(K) R2(K)
10
47
LMUN5214T3G
8D
10
47
Vin(V)
-6 ~+40
-6 ~+40
Shipping
Symbol
Limits
Unit
Collector–Emitter Voltage
VCEO
50
V
Collector–Base Voltage
VCBO
50
V
IC
100
mA
Symbol
Limits
Unit
FR−5 Board (Note 1) @ TA = 25ºC
202
mW
Derate above 25ºC
1.6
mW/ºC
RΘJA
618
ºC/W
TJ,Tstg
−55∼+150
ºC
3000/Tape&Reel
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Collector Current — Continuous
4. THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation,
Thermal Resistance,
PD
Junction–to–Ambient(Note 1)
Junction and Storage temperature
1. FR–4 @ Minimum Pad.
Leshan Radio Company, LTD.
Rev.C Feb. 2023
1/5
LMUN5214T1G, S-LMUN5214T1G
Bias Resistor Transistor
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 μA, IE = 0)
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
Symbol
Min.
Typ.
Max.
Unit
VBR(CEO)
50
-
-
V
VBR(CBO)
50
-
-
V
ICBO
-
-
100
nA
ICEO
-
-
500
nA
IEBO
-
-
0.2
mA
HFE
80
140
-
VCE(sat)
-
-
0.25
V
VOL
-
-
0.2
V
VOH
4.9
-
-
V
Vi(off)
-
-
0.5
V
Vi(on)
2
-
-
V
R1
7
10
13
KΩ
R1/R2
0.17
0.21
0.25
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(IC = 5.0 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ)
Input Voltage(off)
(VCE=5.0V,IC=100µA)
Input Voltage(on)
(VCE=0.2V,IC=5.0mA)
Input Resistor
Resistor Ratio
2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
Leshan Radio Company, LTD.
Rev.C Feb. 2023
2/5
LMUN5214T1G, S-LMUN5214T1G
Bias Resistor Transistor
6.ELECTRICAL CHARACTERISTICS CURVES
100
1000
75℃
25℃
VCE=10V
Vo=0.2V
125℃
100
10
-25℃
75℃
HFE
Vin(V)
25℃
-25℃
10
1
125℃
1
0.0001
0.001
0.1
0.0001
0.01
0.001
0.01
IC(A)
IC(A)
HFE vs. IC
Vin vs. IC
1
75℃
Vo=5V
IC/IB=10
0.01
25℃
IC(A)
125℃
VCE(sat) (V)
25℃ 75℃
-25℃
0.001
125℃
0.1
-25℃
0.0001
0.00001
0
1
2
3
4
5
0.01
0.01
0.03
0.04
IC(A)
Vin(V)
VCE(sat) vs. IC
IC vs. Vin
Leshan Radio Company, LTD.
0.02
Rev.C Feb. 2023
3/5
LMUN5214T1G, S-LMUN5214T1G
Bias Resistor Transistor
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
5
f=1MHz
Ta=25℃
Cobo(pF)
4
3
2
1
0
10
20
30
VCB(V)
40
50
Capacitance
Leshan Radio Company, LTD.
Rev.C Feb. 2023
4/5
LMUN5214T1G, S-LMUN5214T1G
Bias Resistor Transistor
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
A
A1
A2
b
c
D
E
e
e1
L
HE
0.80
0.00
NOM
MAX
0.90 1.00
0.05 0.10
0.70REF
0.30 0.35 0.40
0.10 0.18 0.25
1.80 2.10 2.20
1.15 1.24 1.35
1.20 1.30 1.40
0.65REF
0.20 0.38 0.56
2.00 2.10 2.40
MIN
NOM
MAX
0.032
0.035
0.0394
0
0.002
0.004
0.028REF
0.012
0.014
0.016
0.004
0.007
0.01
0.071
0.083
0.087
0.045
0.049
0.053
0.047
0.051
0.055
0.026REF
0.008
0.015
0.022
0.079
0.083
0.095
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.C Feb. 2023
5/5
DISCLAIMER
●
Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee.
The curve of test items without electric parameter is used as reference only.
●
Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
●
All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.
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