LN06N060TZHG

LN06N060TZHG 60V N-Channel (D-S) MOSFET 1. FEATURES ● Low thermal impedance. ● Fast switching speed. We declare that the material of product compliance with ● SOT223 RoHS requirements and Halogen Free. 2. APPLICATIONS ● Load/Power switch forportables and computing ● DC−DC conversion 3. DEVICE MARKING AND ORDERING INFORMATION Device LN06N060TZHG Marking Shipping GS 1000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) TA = 25℃ Symbol Limits Unit VDS VGS ID 60 ±20 V IDM IAS EAS 18 12 7.2 PD 2 TJ , Tstg -55~+150 Power Dissipation (Note 1) TA = 25℃ Operating Junction and Storage Temperature Range 4.5 A A mJ W ℃ 5. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Thermal Resistance,Junction–to–Ambient(Note 1) RΘJA 60 ℃/W Thermal Resistance,Junction-to-Case RΘJC 10 ℃/W 1."1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 2.Pulse width limited by maximum junction temperature Leshan Radio Company, LTD. Rev.A Nov. 2021 1/6 LN06N060TZHG 60V N-Channel (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VBRDSS 60 - - V VGS(th) 1.0 2.0 3.0 V IGSS - - ±100 nA IDSS - - 1 uA RDS(ON) - - 60 75 mΩ VSD - - 1.2 V Qg - 12.7 - Qgs - 2.3 - Qgd - 3.6 - Ciss - 743 - Coss - 38 - Crss - 26 - td(on) - 8.1 - tr - 4.2 - td(off) - 26.4 - tf - 5.2 - Static Drain–Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Gate-Source Threshold Voltage (VDS = VGS , ID = 250 μA) Gate-Body Leakage Current (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0 V) Drain-Source On-Resistance(Note 3) (VGS = 10 V, ID = 3 A) (VGS = 5 V, ID = 2 A) Diode Forward Voltage (IS = 1 A, VGS = 0 V) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance (VDS = 30 V, ID = 3 A, VGS = 10 V) (VGS = 0 V, VDS = 30 V, f= 1MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDS = 30 V, RL = 30 Ω, ID = 1 A, VGS = 10 V, RG = 6.2 Ω) nC pF ns 3.Pulse test: PW ≤ 300us duty cycle ≤ 2%. Leshan Radio Company, LTD. Rev.A Nov. 2021 2/6 LN06N060TZHG 60V N-Channel (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES VGS=4.8V,5V,6V,7V,8V,9V,10V 20 20 VGS=4.4V 15 VGS=4.2V ID(A) ID(A) 15 VGS=4.6V 10 -55℃ 10 25℃ VGS=4.0V VGS=3.8V 5 5 150℃ VGS=3.6V VGS=3.4V 0 0 0 1 2 3 4 5 0 VDS(V) 1 2 VGS(V) 3 4 5 ID vs. VGS ID vs. VDS 0.12 20 0.10 15 RDS(on) (Ω) IS(A) 0.08 10 VGS=5V 0.06 VGS=10V 0.04 150℃ 25℃ 5 -55℃ 0.02 0.00 0 0.0 0.2 0.4 0.6 0.8 VSD(V) 1.0 1.2 IS vs. VSD Leshan Radio Company, LTD. 2 4 6 8 10 12 ID(A) 14 16 18 20 RDS(on) vs. ID Rev.A Nov. 2021 3/6 LN06N060TZHG 60V N-Channel (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.20 0.20 0.18 ID=3A 0.16 0.16 RDS(on) (Ω) RDS(on) (Ω) 0.14 0.12 150℃ 0.08 0.12 0.10 0.08 VGS=5V,ID=2A 0.06 25℃ VGS=10V,ID=3A 0.04 0.04 -55℃ 0.02 0.00 0.00 0 2 4 6 8 10 -50 VGS(V) -25 25 50 75 Tj(℃) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 1200 2.4 f=1.0MHz, Ta=25℃ 1000 ID=250uA Capacitance(pF) 2.2 VGSth(V) 0 2.0 1.8 1.6 Ciss 800 600 400 200 Coss 1.4 0 -50 -25 0 25 50 75 Tj(℃) 100 125 150 VGSth vs. Tj Leshan Radio Company, LTD. Crss 0 10 20 30 VDS(V) 40 50 60 Capacitance Rev.A Nov. 2021 4/6 LN06N060TZHG 60V N-Channel (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us 10 ID(A) 100us 1 100ms 1ms 10ms DC result 0.1 0.01 PCB Size 1.5 x 1.5in(FR-4) 0.1 1 10 100 VDS(V) Notmalized Effective Transient Thermal Impedance Safe Operating Area 10 1 0.1 0.01 50% 25% 10% 5% 1% P(pk) t1 t2 0.1% 1.Duty Cycle, D = t1 / t2 2.RθJA = 60 °C /W 3.TJ -TA =P*RθJA(t) 4.RθJA(t)=r(t)*RθJA 0.001 Single Pulse 0.0001 0.00001 0.000001 0.00001 FR4 Board 0.0001 0.001 0.01 0.1 Pulse time (s) 1 10 100 1000 Thermal Response Leshan Radio Company, LTD. Rev.A Nov. 2021 5/6 LN06N060TZHG 60V N-Channel (D-S) MOSFET 8.OUTLINE AND DIMENSIONS SOT223 D b1 C E HE ɵ1 ɵ1 L1 A2 b2 Gauge Plane Seating Plane L L1 0.25 ɵ e1 e DIM A A1 A2 b1 b2 c D E e e1 HE L L1 θ θ1 SOT223 MIN NOR 1.50 1.60 0.00 0.05 0.80 0.90 2.90 3.02 0.60 0.72 0.20 0.27 6.30 6.50 3.30 3.50 4.60BSC 2.30BSC 6.80 7.00 0.80 1.00 1.75(REF) 0º~8º 8º 10º All Dimensions in mm MAX 1.70 0.10 1.00 3.10 0.80 0.35 6.70 3.70 7.20 1.20 12º A GENERAL NOTES A1 1. Top package surface finish Ra0.4±0.2um 2. Bottom package surface finish Ra0.7±0.2um 3. Side package surface finish Ra0.4±0.2um 4. Protrusion or Gate Burrs shall not exceed 0.10mm per side. 9.SOLDERING FOOTPRINT Y1 X1 C2 DIM X1 Y1 X2 Y2 C1 C2 Y2 X2 SOT223 (mm) 3.80 2.00 1.20 2.00 2.30 6.30 C1 Leshan Radio Company, LTD. C1 Rev.A Nov. 2021 6/6 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.