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LN2306LT1G

LN2306LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    30V N沟道增强型MOSFET

  • 数据手册
  • 价格&库存
LN2306LT1G 数据手册
LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS= 30V ● RDS(ON), VGS@10V, IDS@5.8A = 38mΩ ● RDS(ON), VGS@4.5V, IDS@5.0A = 43mΩ ● RDS(ON), VGS@2.5V, IDS@4.0A = 62mΩ ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● ● Advanced trench process technology High density cell design for ultra low on-resistance 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LN2306LT1G N06 3000/Tape&Reel LN2306LT3G N06 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS 30 V VGS ±12 V ID 5.8 IDM 30 Symbol Limits Unit PD 1.4 W RΘJA 140 ºC/W TJ,Tstg −55∼+150 ºC Drain Current A – Continuous TA = 25°C – Pulsed(Note 1) 5. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.C Mar 2016 1/5 LN2306LT1G, S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage V(BR)DSS (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current IDSS (VDS=9.6V, VGS=0V) Gate–Body Leakage Current, Forward IGSSF (VDS = 0 V, VGS = 8 V) Gate–Body Leakage Current, Reverse IGSSR (VDS = 0 V, VGS = -8 V) Forward Transconductance gfs (VDS = 5.0 V, ID = 5 A) Min. Typ. Max. 30 - - Unit Vdc μAdc - - 1 nAdc - - 100 nAdc - - -100 S 10 15 - ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250μAdc) Vdc 0.7 - 1.4 (VGS = 10 V, ID =5.8 A) - 31 38 (VGS = 4.5 V, ID =5 A) - 34 43 (VGS = 2.5 V, ID = 4 A) - 45 62 Static Drain–Source On–State Resistance mΩ RDS(on) DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Output Capacitance Coss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Reverse Transfer Capacitance Crss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) pF - 513.51 pF - 80.85 pF - 54.87 - td(on) - 7 14 tr - 15 30 td(off) - 38 76 tf - 3 6 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 15V, RL = 2.7Ω ΙD = 1Α, VGEN = 10V,RG = 3Ω ) Fall Time ns SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage VSD V - (VGS = 0 Vdc, ISD = 1 Adc) - 1.2 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.C Mar 2016 2/5 LN2306LT1G, S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES 25 20 VDS=6V 18 VGS=2.5V 20 ID,Drain Current(A) ID,Drain Current(A) 16 14 12 10 150℃ 8 15 VGS=2V 10 6 25℃ 4 2 5 -55℃ VGS=1.5V 0 0 0 0.5 1 1.5 2 VGS,Gate-to-Source Voltage(V) 2.5 0 6 ON-Region Characteristics Transfer Characteristics 1.4 0.7 1.2 0.6 RDS(on),On-Resistance(Ω) VGS(th)(Normallized) 2 4 VDS,Drain-to-Source Voltage(V) 1 0.8 0.6 0.4 0.5 VGS=2V 0.4 0.3 0.2 0.1 0.2 VGS=2.5V 0 0 -55 -5 45 95 T,temperature(℃) 145 VGS(th) vs. Temperature Leshan Radio Company, LTD. 0 5 10 15 ID,Drain Current(A) 20 RDS(on) vs. ID Rev.C Mar 2016 3/5 LN2306LT1G, S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) 0.10 0.09 RDS(on),On-Resistance(Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 VGS,Gate-to -Source Voltage (V) 3 RDS(on) vs. VGS Leshan Radio Company, LTD. Rev.C Mar 2016 4/5 LN2306LT1G, S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Mar 2016 5/5
LN2306LT1G 价格&库存

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LN2306LT1G
    •  国内价格
    • 10+0.21439
    • 50+0.19831
    • 200+0.18491
    • 600+0.17151
    • 1500+0.16079
    • 3000+0.15409

    库存:1910