LN2306LT1G
S-LN2306LT1G
30V N-Channel Enhancement-Mode MOSFET
1. FEATURES
●
VDS= 30V
●
RDS(ON), VGS@10V, IDS@5.8A = 38mΩ
●
RDS(ON), VGS@4.5V, IDS@5.0A = 43mΩ
●
RDS(ON), VGS@2.5V, IDS@4.0A = 62mΩ
●
We declare that the material of product compliance with
SOT23(TO-236)
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
●
●
Advanced trench process technology
High density cell design for ultra low on-resistance
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LN2306LT1G
N06
3000/Tape&Reel
LN2306LT3G
N06
10000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Gate–to–Source Voltage – Continuous
Symbol
Limits
Unit
VDSS
30
V
VGS
±12
V
ID
5.8
IDM
30
Symbol
Limits
Unit
PD
1.4
W
RΘJA
140
ºC/W
TJ,Tstg
−55∼+150
ºC
Drain Current
A
– Continuous TA = 25°C
– Pulsed(Note 1)
5. THERMAL CHARACTERISTICS
Parameter
Maximum Power Dissipation
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.
2. 1-in²2oz Cu PCB board.
Leshan Radio Company, LTD.
Rev.C Mar 2016
1/5
LN2306LT1G, S-LN2306LT1G
30V N-Channel Enhancement-Mode MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Symbol
Characteristic
Drain–Source Breakdown Voltage
V(BR)DSS
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
IDSS
(VDS=9.6V, VGS=0V)
Gate–Body Leakage Current, Forward
IGSSF
(VDS = 0 V, VGS = 8 V)
Gate–Body Leakage Current, Reverse
IGSSR
(VDS = 0 V, VGS = -8 V)
Forward Transconductance
gfs
(VDS = 5.0 V, ID = 5 A)
Min.
Typ.
Max.
30
-
-
Unit
Vdc
μAdc
-
-
1
nAdc
-
-
100
nAdc
-
-
-100
S
10
15
-
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
(VDS = VGS, ID = 250μAdc)
Vdc
0.7
-
1.4
(VGS = 10 V, ID =5.8 A)
-
31
38
(VGS = 4.5 V, ID =5 A)
-
34
43
(VGS = 2.5 V, ID = 4 A)
-
45
62
Static Drain–Source On–State Resistance
mΩ
RDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
Output Capacitance
Coss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
Reverse Transfer Capacitance
Crss
(VGS = 0 V, f = 1.0MHz,VDS= 15 V)
pF
-
513.51
pF
-
80.85
pF
-
54.87
-
td(on)
-
7
14
tr
-
15
30
td(off)
-
38
76
tf
-
3
6
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 15V, RL = 2.7Ω
ΙD = 1Α, VGEN = 10V,RG
= 3Ω )
Fall Time
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
V
-
(VGS = 0 Vdc, ISD = 1 Adc)
-
1.2
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD.
Rev.C Mar 2016
2/5
LN2306LT1G, S-LN2306LT1G
30V N-Channel Enhancement-Mode MOSFET
7.ELRCTRICAL CHARACTERISTICS CURVES
25
20
VDS=6V
18
VGS=2.5V
20
ID,Drain Current(A)
ID,Drain Current(A)
16
14
12
10
150℃
8
15
VGS=2V
10
6
25℃
4
2
5
-55℃
VGS=1.5V
0
0
0
0.5
1
1.5
2
VGS,Gate-to-Source Voltage(V)
2.5
0
6
ON-Region Characteristics
Transfer Characteristics
1.4
0.7
1.2
0.6
RDS(on),On-Resistance(Ω)
VGS(th)(Normallized)
2
4
VDS,Drain-to-Source Voltage(V)
1
0.8
0.6
0.4
0.5
VGS=2V
0.4
0.3
0.2
0.1
0.2
VGS=2.5V
0
0
-55
-5
45
95
T,temperature(℃)
145
VGS(th) vs. Temperature
Leshan Radio Company, LTD.
0
5
10
15
ID,Drain Current(A)
20
RDS(on) vs. ID
Rev.C Mar 2016
3/5
LN2306LT1G, S-LN2306LT1G
30V N-Channel Enhancement-Mode MOSFET
7.ELRCTRICAL CHARACTERISTICS CURVES(Con.)
0.10
0.09
RDS(on),On-Resistance(Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
VGS,Gate-to -Source Voltage (V)
3
RDS(on) vs. VGS
Leshan Radio Company, LTD.
Rev.C Mar 2016
4/5
LN2306LT1G, S-LN2306LT1G
30V N-Channel Enhancement-Mode MOSFET
8.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN
A 0.89
NOM
MAX
MIN
NOM
MAX
0.04
0.044
1
1.11
0.035
A1
0.01
0.06
0.1
0.001 0.002 0.004
b
0.37
0.44
0.5
0.015 0.018
c
0.09
0.13
0.18
0.003 0.005 0.007
D
2.80
2.9
3.04
0.11
E
1.20
1.3
1.4
0.047 0.051 0.055
e
1.78
1.9
2.04
0.07
L
0.10
0.2
0.3
0.004 0.008 0.012
L1
HE
0.35
0.54
0.69
0.014 0.021 0.029
2.10
2.4
2.64
0.083 0.094 0.104
0°
---
10°
θ
0°
0.114
0.02
0.12
0.075 0.081
---
10°
9.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.C Mar 2016
5/5