LN2312LT1G

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G S-LN2312LT1G 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1 we declare that the material of product 2 compliance with RoHS requirements. SOT– 23 (TO–236AB) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. D ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package G S Ordering Information Device LN2312LT1G S-LN2312LT1G LN2312LT3G S-LN2312LT3G Marking Shipping N12 3000/Tape&Reel N12 10000/Tape&Reel Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±8 V 3 4.9 A 3 3.4 A 15 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 0.75 W Linear Derating Factor 1.3 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value Unit 140 ℃/W Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G , S-LN2312LT1G Electrical Characteristics@Tj=25oC(unless otherwise specified) Parameter Static Drain-Source Breakdown Voltage Symbol Test Condition Min Typ Max Unit BVDSS VGS = 0V, ID = 250uA 20 - - V Drain-Source On-State Resistance RDS(on) VGS = 1.8V, ID = 4.0A 31 57 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 4.5A 24 47 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 5A 21 41 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.6 1 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 uA Gate Body Leakage Gate Resistance Forward Transconductance IGSS Rg gfs VGS = +8V, VDS = 0V + 100 nA Dynamic Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Crss IS Diode Forward Voltage VSD VDS = 10V, ID = 5A VDS = 10V, I D = 5A VGS = 4.5V VDD = 10V, ΙD = 1Α, VGEN = 4.5V RG = 6Ω VDS = 8V, V GS = 0V f = 1.0 MHz IS = 1.7A, VGS = 0V 0.4 mΩ 40 S 11.2 1.4 nC 2.2 15 40 48 31 500 25 60 70 45 ns pF 300 140 1.7 A 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width