LN2316ELT1G

LN2316ELT1G N-Channel 20V (D-S) MOSFET , ESD Protection 1. FEATURES RDS(ON) =25mΩ @VGS =4.5V ● RDS(ON) =29 mΩ @VGS =2.5V ● ● RDS(ON) =42 mΩ @VGS =1.8V ● Super high density cell design for extremely low RDS(ON) ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● Exceptional on-resistance and maximum DC current capability. (3) 2. APPLICATIONS Power Management in Note book Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter ● ● (1) (2) 3. DEVICE MARKING AND ORDERING INFORMATION Device LN2316ELT1G Marking Shipping N16 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Continuous Drain Current TA =25℃ TA =70℃ Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Symbol Limits Unit VDSS 20 V VGS ±8 6.4 5.1 V 26 A ID IDM TA =25℃ TA =70℃ PD TJ Thermal Resistance-Junction to Ambient(Note 1) RθJA Thermal Resistance-Junction to Case RθJC 1. The device mounted on 1in²FR4 board with 2 oz copper Leshan Radio Company, LTD. Rev.E Nov. 2021 1.1 0.7 -55~+150 110 80 A W ℃ ℃/W ℃/W 1/5 LN2316ELT1G N-Channel 20V (D-S) MOSFET , ESD Protection 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. V(BR)DSS 20 - - Unit STATIC Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V Gate Threshold Voltage (VDS = VGS , ID = 250 μA) VGS(th) 0.4 - 1 IGSS - - ±1 ±10 IDSS - - 1 RDS(ON) - 17 24 25 - 32 42 VSD - 0.6 1 Gate Leakage Current (VDS = 0 V, VGS = ±4.5 V) (VDS = 0 V, VGS = ±8 V) Zero Gate Voltage Drain Current (VDS = 20 V, VGS = 0 V) µA Drain-Source On-Resistance(Note 2) (VGS = 4.5 V, ID = 6.5 A) (VGS = 2.5 V, ID = 5.5 A) (VGS = 1.8 V, ID = 5 A) Diode Forward Voltage (IS = 1 A, VGS = 0 V) DYNAMIC Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, VGS = 4.5 V, ID = 6.5 A VDS = 10 V, VGS = 0 V,f= 1MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDS = 10 V, RL = 1.5 Ω,VGS = 5 V, RGEN = 3 Ω 29 Qg - 10 - Qgs - 0.9 - Qgd - 3 - Ciss - 150 - Coss - 95 - Crss - 25 - td(on) - 250 - tr td(off) - 420 3950 3700 - tf Turn-Off Fall Time mΩ V nC pF ns 2.Pulse test; pulse width ≤300us, duty cycle≤2% Leshan Radio Company, LTD. Rev.E Nov. 2021 2/5 LN2316ELT1G N-Channel 20V (D-S) MOSFET , ESD Protection 6.ELECTRICAL CHARACTERISTICS CURVES 7 7 VGS=1.5V,2V,2.5V 6 VGS=1.4V VDS=10V Ta=25℃ 6 5 ID,Drain Current(A) ID,Drain Current(A) 25℃ VGS=1.3V 4 3 VGS=1.2V 2 5 4 -55℃ 150℃ 3 2 VGS=1.1V 1 1 0 0 0 1 2 3 VDS,Drain to Source Voltage(V) 4 0 0.5 1 1.5 VGS,Gate to Source Voltage(V) ID vs. VDS ID vs. VGS 0.04 10 RDS(on),On Reisistance (Ω) IS,Forward Current(A) VGS=1.8V 1 150℃ 25℃ -55℃ 0.1 0.03 VGS=2.5V VGS=4.5V 0.02 Ta=25℃ 0.01 0.01 0.2 0.4 0.6 0.8 1 2 4 5 6 7 ID,Drain Current(A) VSD,Diode Forward Voltage(V) IS vs. VSD Leshan Radio Company, LTD. 3 RDS(on) vs. ID Rev.E Nov. 2021 3/5 LN2316ELT1G N-Channel 20V (D-S) MOSFET , ESD Protection 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.8 0.05 VGSTH Threshold Voltage(V) ID=250uA RDS(on),On Resistance (Ω) 0.04 VGS=2.5V,ID=5.5A 0.03 VGS=4.5V,ID=6.5A 0.02 0.7 0.6 0.5 0.4 0.01 0.3 0.00 -50 -25 0 0.2 25 50 75 100 125 150 Tj,Temperature(℃) -50 -25 0 VGSTH vs. Tj RDS(on) vs Tj 0.10 600 f=1.0MHz ID=6.5A 0.09 Ta=25℃ 500 0.08 Ciss Capacitance(pF) 0.07 RDS(on) (Ω) 25 50 75 100 125 150 Tj,Temperature(℃) 0.06 0.05 0.04 150℃ 0.03 400 300 200 25℃ Coss 0.02 100 -55℃ 0.01 Crss 0.00 0 0 2 4 VGS(V) 6 8 0 20 Capacitance RDS(on) vs. VGS Leshan Radio Company, LTD. 5 10 15 VDS,Drain to Source Voltage(V) Rev.E Nov. 2021 4/5 LN2316ELT1G N-Channel 20V (D-S) MOSFET , ESD Protection 7.OUTLINE AND DIMENSIONS SOT23E DIM A MIN 0.90 A1 0.01 b c 0.30 0.10 D 2.80 E e 1.20 1.80 L 0.20 L1 HE θ NOR MAX 1.00 1.10 0.06 0.40 0.10 0.50 0.17 0.20 2.90 1.30 3.00 1.40 1.90 2.00 0.40 0.60 0.60REF 2.20 0º 2.40 - 2.60 10º All Dimensions in mm GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um 8.SOLDERING FOOTPRINT DIM Leshan Radio Company, LTD. SOT23E (mm) X 0.80 Y 0.90 A 2.00 B 0.95 C 0.95 Rev.E Nov. 2021 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.