LN235N3T5G

LN235N3T5G 30V, Single N-channel Trench MOSFET 1. FEATURES ● Fast switching ● Low RDS(ON) ● Trench MOSFET technology ● This is a Pb Free Device ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS Low Side Load Switch ● Level Shift Circuits ● DC−DC Converter ● Portable Applications i.e. DSC, PDA, Cell Phone, etc. ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LN235N3T5G N5 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain−to−Source Voltage Unit VDSS Limits 30 VGS ±12 V ID 930 mA Symbol Gate−to−Source Voltage V Drain Current (Note 1) Steady State (TA = 25°C) (TA = 100°C) 590 Power Dissipation (Note 1) PD Steady State Pulsed Drain Current (tp = 10 µs) Operating Junction and Storage Temperature Range 715 mW IDM 3.7 A TJ , TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes 260 TL (1/8″ from case for 10 s) ℃ 5. THERMAL CHARACTERISTICS Parameter Junction−to−Ambient − Steady State (Note 1) Symbol Limits Unit RΘJA 305 ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Leshan Radio Company, LTD. Rev.O Aug 2016 1/5 LN235N3T5G 30V,Single N-channel Trench MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic STATIC CHARACTERISTICS Symbol Drain-Source Breakdown Voltage V(BR)DSS (VGS =0V, ID =250μA) Gate Threshold Voltage VGS(th) (VDS =VGS , ID =250μA) Gate-Body Leakage Current IGSS (VDS =0V, VGS =±12V) Zero Gate Voltage Drain Current IDSS (VDS =30V, VGS =0V) Min. Typ. Max. 30 - - 0.45 - 1.5 - - ±10 - - 1 - - 0.46 - - 0.68 - - 1.2 0.65 0.14 0.18 37 8.6 5.4 6.5 9.5 14 5.5 0.87 56 13 28 - Unit V µA Drain-Source On-Resistance (VGS =4.5V, ID = 200mA) RDS(ON) Drain-Source On-Resistance (VGS =2.5V, ID = 200mA) Diode Forward Voltage VSD (IS =300mA, VGS =0V) DYNAMIC PARAMETERS Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDS =15V, VGS =4.5V, ID =1.0A) Qg - Qgs - Qgd - (VDS =25V, VGS =0V, f=1MHz) Ciss - Coss - (VDS =15V, RL =15Ω, VGEN =4.5V, RG =6 Ω) Crss - td(on) - tr - td(off) - tf - Ω V nC pF ns Note 2: Pulse test; pulse width≤300µs, duty cycle≤ 2% Leshan Radio Company, LTD. Rev.O Aug 2016 2/5 LN235N3T5G 30V,Single N-channel Trench MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES 1.0 0.9 1.8V 0.9 Ta=25℃ 4.5V 0.8 0.8 0.7 0.7 0.6 ID,Drain Current (A) ID,Drain Current (A) 1.0 2.0V 1.6V 0.5 0.4 0.3 1.4V 0.2 25℃ 0.6 0.5 0.4 150℃ -55℃ 0.3 0.2 0.1 1.2V 0.1 VDS=5V 0.0 0.0 0 2 4 6 8 VDS,Drain to Source Voltage (V) 0.0 10 0.5 1.0 1.5 2.0 VGS,Gate to Source Voltage (V) ID vs. VGS ID vs. VDS 0.4 0.6 VGS=4.5V ID=200mA RDSon ON Resistance (Ω) 0.3 RDSon,ON Resistance (Ω) 150℃ 0.5 0.2 0.1 0.4 25℃ 0.3 -55℃ 0.2 0.1 0.0 0.0 -50 -25 0 25 50 75 100 125 Tj,Junction Temperature(℃) 150 0.1 0.5 0.7 0.9 1.1 ID,Drain Current (A) RDSon vs. ID RDSon vs. Tj Leshan Radio Company, LTD. 0.3 Rev.O Aug 2016 3/5 LN235N3T5G 30V,Single N-channel Trench MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) 0.6 1.2 VGS=VDS ID=250uA VGS=4.5V 1.0 150℃ VGSth Threshold Voltage (V) RDSon ON Resistance (Ω) 0.5 0.4 0.3 25℃ 0.2 -55℃ 0.1 0.0 0.8 0.6 0.4 0.2 0.0 0.1 0.3 0.5 0.7 0.9 1.1 -50 ID,Drain Current (A) 0 25 50 75 100 125 TJ Junction Temperature(℃) 150 VGSth vs. Tj RDSon vs. ID Leshan Radio Company, LTD. -25 Rev.O Aug 2016 4/5 LN235N3T5G 30V,Single N-channel Trench MOSFET 8.OUTLINE AND DIMENSIONS DIM D SOT883 MIN TYP MAX 1.05 1.00 0.95 E 0.65 0.60 0.50 e - 0.64 - e1 - 0.34 - L 0.19 0.24 0.29 L1 0.22 0.27 0.32 b 0.10 0.15 0.20 b1 0.44 0.49 0.54 A 0.43 0.48 0.53 A1 0 - 0.05 All Dimensions in mm 9.SOLDERING FOOTPRINT Dimensions c X X1 X2 Y Y1 Leshan Radio Company, LTD. Rev.O Aug 2016 (mm) 0.70 1.10 0.40 0.40 0.20 0.55 5/5